A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications

Fumitaka IIZUKA; Tsuyoshi OGINO; Hiroshi SUZUKI; Kazuhiko FUKAWA

A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications

Fumitaka IIZUKA, Tsuyoshi OGINO, Hiroshi SUZUKI, Kazuhiko FUKAWA

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In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.5 pp.762-771

Publication Date: 2004/05/01

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Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)

Category: Active Devices and Circuits

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Fumitaka IIZUKA, Tsuyoshi OGINO, Hiroshi SUZUKI, Kazuhiko FUKAWA, "A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 5, pp. 762-771, May 2004, doi: .
Abstract: In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e87-c_5_762/_p

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@ARTICLE{e87-c_5_762,
author={Fumitaka IIZUKA, Tsuyoshi OGINO, Hiroshi SUZUKI, Kazuhiko FUKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications},
year={2004},
volume={E87-C},
number={5},
pages={762-771},
abstract={In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 762
EP - 771
AU - Fumitaka IIZUKA
AU - Tsuyoshi OGINO
AU - Hiroshi SUZUKI
AU - Kazuhiko FUKAWA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2004
AB - In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.
ER -