An Output VSWR Protection Circuit Using Collector/Emitter Avalanche Breakdown for SiGe HBT Power Amplifiers

Hyunchol SHIN; Hojung JU; M.  Frank CHANG; Keith NELLIS; Peter ZAMPARDI

An Output VSWR Protection Circuit Using Collector/Emitter Avalanche Breakdown for SiGe HBT Power Amplifiers

Hyunchol SHIN, Hojung JU, M. Frank CHANG, Keith NELLIS, Peter ZAMPARDI

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An output load VSWR (voltage standing wave ratio) protection circuit for SiGe power amplifiers (PA) is presented by using the relatively low collector-emitter avalanche breakdown characteristic of SiGe HBT. Unlike the conventional diode-type switch, the new protection circuit completely eliminates the undesirable dc leakage current during the normal operation of the PA. Simulations and measurements show the proposed protection circuit enhances the ruggedness of the PA at harsh operating condition while it imposes only minor performance degradation at normal operating condition.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.9 pp.1643-1645

Publication Date: 2004/09/01

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Type of Manuscript: LETTER

Category: Microwaves, Millimeter-Waves

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Hyunchol SHIN, Hojung JU, M. Frank CHANG, Keith NELLIS, Peter ZAMPARDI, "An Output VSWR Protection Circuit Using Collector/Emitter Avalanche Breakdown for SiGe HBT Power Amplifiers" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 9, pp. 1643-1645, September 2004, doi: .
Abstract: An output load VSWR (voltage standing wave ratio) protection circuit for SiGe power amplifiers (PA) is presented by using the relatively low collector-emitter avalanche breakdown characteristic of SiGe HBT. Unlike the conventional diode-type switch, the new protection circuit completely eliminates the undesirable dc leakage current during the normal operation of the PA. Simulations and measurements show the proposed protection circuit enhances the ruggedness of the PA at harsh operating condition while it imposes only minor performance degradation at normal operating condition.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e87-c_9_1643/_p

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@ARTICLE{e87-c_9_1643,
author={Hyunchol SHIN, Hojung JU, M. Frank CHANG, Keith NELLIS, Peter ZAMPARDI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Output VSWR Protection Circuit Using Collector/Emitter Avalanche Breakdown for SiGe HBT Power Amplifiers},
year={2004},
volume={E87-C},
number={9},
pages={1643-1645},
abstract={An output load VSWR (voltage standing wave ratio) protection circuit for SiGe power amplifiers (PA) is presented by using the relatively low collector-emitter avalanche breakdown characteristic of SiGe HBT. Unlike the conventional diode-type switch, the new protection circuit completely eliminates the undesirable dc leakage current during the normal operation of the PA. Simulations and measurements show the proposed protection circuit enhances the ruggedness of the PA at harsh operating condition while it imposes only minor performance degradation at normal operating condition.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - An Output VSWR Protection Circuit Using Collector/Emitter Avalanche Breakdown for SiGe HBT Power Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 1643
EP - 1645
AU - Hyunchol SHIN
AU - Hojung JU
AU - M. Frank CHANG
AU - Keith NELLIS
AU - Peter ZAMPARDI
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2004
AB - An output load VSWR (voltage standing wave ratio) protection circuit for SiGe power amplifiers (PA) is presented by using the relatively low collector-emitter avalanche breakdown characteristic of SiGe HBT. Unlike the conventional diode-type switch, the new protection circuit completely eliminates the undesirable dc leakage current during the normal operation of the PA. Simulations and measurements show the proposed protection circuit enhances the ruggedness of the PA at harsh operating condition while it imposes only minor performance degradation at normal operating condition.
ER -