Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

Masaru SATO; Yoshitaka NIIDA; Atsushi YAMADA; Junji KOTANI; Shiro OZAKI; Toshihiro OHKI; Naoya OKAMOTO; Norikazu NAKAMURA

doi:10.1587/transele.2021MMI0001

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Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

Masaru SATO, Yoshitaka NIIDA, Atsushi YAMADA, Junji KOTANI, Shiro OZAKI, Toshihiro OHKI, Naoya OKAMOTO, Norikazu NAKAMURA

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This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for high-data-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. W-band GaN MMIC achieved the maximum P_out of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average P_out of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.

Publication: IEICE TRANSACTIONS on Electronics Vol.E104-C No.10 pp.480-487

Publication Date: 2021/10/01

Publicized: 2021/03/12

Online ISSN: 1745-1353

DOI: 10.1587/transele.2021MMI0001

Type of Manuscript: Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)

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Authors

Masaru SATO
  Fujitsu Laboratories
Yoshitaka NIIDA
  Fujitsu Laboratories
Atsushi YAMADA
  Fujitsu Laboratories,Fujitsu
Junji KOTANI
  Fujitsu Laboratories,Fujitsu
Shiro OZAKI
  Fujitsu Laboratories,Fujitsu
Toshihiro OHKI
  Fujitsu Laboratories
Naoya OKAMOTO
  Fujitsu Laboratories,Fujitsu
Norikazu NAKAMURA
  Fujitsu Laboratories,Fujitsu

Keyword

GaN power amplifier, InAlGaN/GaN HEMT, millimeter-wave, power amplifier, transmission line transformer, wide bandwidth

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Masaru SATO, Yoshitaka NIIDA, Atsushi YAMADA, Junji KOTANI, Shiro OZAKI, Toshihiro OHKI, Naoya OKAMOTO, Norikazu NAKAMURA, "Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers" in IEICE TRANSACTIONS on Electronics, vol. E104-C, no. 10, pp. 480-487, October 2021, doi: 10.1587/transele.2021MMI0001.
Abstract: This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for high-data-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. W-band GaN MMIC achieved the maximum P_out of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average P_out of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.2021MMI0001/_p

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@ARTICLE{e104-c_10_480,
author={Masaru SATO, Yoshitaka NIIDA, Atsushi YAMADA, Junji KOTANI, Shiro OZAKI, Toshihiro OHKI, Naoya OKAMOTO, Norikazu NAKAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers},
year={2021},
volume={E104-C},
number={10},
pages={480-487},
abstract={This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for high-data-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. W-band GaN MMIC achieved the maximum P_out of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average P_out of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.},
keywords={},
doi={10.1587/transele.2021MMI0001},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 480
EP - 487
AU - Masaru SATO
AU - Yoshitaka NIIDA
AU - Atsushi YAMADA
AU - Junji KOTANI
AU - Shiro OZAKI
AU - Toshihiro OHKI
AU - Naoya OKAMOTO
AU - Norikazu NAKAMURA
PY - 2021
DO - 10.1587/transele.2021MMI0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2021
AB - This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for high-data-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. W-band GaN MMIC achieved the maximum P_out of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average P_out of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.
ER -