Fabrication Technology and Electronical Characteristics of Pt/TiO2-x/TiO2/TiO2+x/Pt Nano-Film Memristor

Zhiyuan LI; Qingkun LI; Dianzhong WEN

doi:10.1587/transele.E100.C.475

Fabrication Technology and Electronical Characteristics of Pt/TiO_2-x/TiO₂/TiO_2+x/Pt Nano-Film Memristor

Zhiyuan LI, Qingkun LI, Dianzhong WEN

Full Text Views

0

Share
Cite this

Summary :

Key fabrication technology for the Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is investigated, including preparing platinum (Pt) electrodes and TiO_2-x/TiO₂/TiO_2+x nano-films. The effect of oxygen flow rate and deposition rate during fabrication on O:Ti ratio of thin films is demonstrated. The fabricated nano-films with different oxygen concentration are validated by the analyzed results from X-ray photoelectron spectroscopy (XPS). The obtained memristor device shows the typical resistive switching behavior and nonvolatile memory effects. An analytical device model for Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is developed based on the fundamental linear relationships between drift-diffusion velocity and the electric field, and boundary conditions are also incorporated in this model. This model is able to predict the relation between variables in the form of explicit formula, which is very critical in memristor-based circuit designs. The measurement results from real devices validate the proposed analytical device model. Some deviations of the model from the measured data are also analyzed and discussed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.475-481

Publication Date: 2017/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E100.C.475

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category

Authors

Zhiyuan LI
  Heilongjiang University
Qingkun LI
  Heilongjiang University
Dianzhong WEN
  Heilongjiang University

Keyword

memristor, fabrication, device model, switching behavior

Cite this

Copy

Zhiyuan LI, Qingkun LI, Dianzhong WEN, "Fabrication Technology and Electronical Characteristics of Pt/TiO2-x/TiO2/TiO2+x/Pt Nano-Film Memristor" in IEICE TRANSACTIONS on Electronics, vol. E100-C, no. 5, pp. 475-481, May 2017, doi: 10.1587/transele.E100.C.475.
Abstract: Key fabrication technology for the Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is investigated, including preparing platinum (Pt) electrodes and TiO_2-x/TiO₂/TiO_2+x nano-films. The effect of oxygen flow rate and deposition rate during fabrication on O:Ti ratio of thin films is demonstrated. The fabricated nano-films with different oxygen concentration are validated by the analyzed results from X-ray photoelectron spectroscopy (XPS). The obtained memristor device shows the typical resistive switching behavior and nonvolatile memory effects. An analytical device model for Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is developed based on the fundamental linear relationships between drift-diffusion velocity and the electric field, and boundary conditions are also incorporated in this model. This model is able to predict the relation between variables in the form of explicit formula, which is very critical in memristor-based circuit designs. The measurement results from real devices validate the proposed analytical device model. Some deviations of the model from the measured data are also analyzed and discussed.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.475/_p

Copy

@ARTICLE{e100-c_5_475,
author={Zhiyuan LI, Qingkun LI, Dianzhong WEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication Technology and Electronical Characteristics of Pt/TiO2-x/TiO2/TiO2+x/Pt Nano-Film Memristor},
year={2017},
volume={E100-C},
number={5},
pages={475-481},
abstract={Key fabrication technology for the Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is investigated, including preparing platinum (Pt) electrodes and TiO_2-x/TiO₂/TiO_2+x nano-films. The effect of oxygen flow rate and deposition rate during fabrication on O:Ti ratio of thin films is demonstrated. The fabricated nano-films with different oxygen concentration are validated by the analyzed results from X-ray photoelectron spectroscopy (XPS). The obtained memristor device shows the typical resistive switching behavior and nonvolatile memory effects. An analytical device model for Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is developed based on the fundamental linear relationships between drift-diffusion velocity and the electric field, and boundary conditions are also incorporated in this model. This model is able to predict the relation between variables in the form of explicit formula, which is very critical in memristor-based circuit designs. The measurement results from real devices validate the proposed analytical device model. Some deviations of the model from the measured data are also analyzed and discussed.},
keywords={},
doi={10.1587/transele.E100.C.475},
ISSN={1745-1353},
month={May},}

Copy

TY - JOUR
TI - Fabrication Technology and Electronical Characteristics of Pt/TiO2-x/TiO2/TiO2+x/Pt Nano-Film Memristor
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 481
AU - Zhiyuan LI
AU - Qingkun LI
AU - Dianzhong WEN
PY - 2017
DO - 10.1587/transele.E100.C.475
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - Key fabrication technology for the Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is investigated, including preparing platinum (Pt) electrodes and TiO_2-x/TiO₂/TiO_2+x nano-films. The effect of oxygen flow rate and deposition rate during fabrication on O:Ti ratio of thin films is demonstrated. The fabricated nano-films with different oxygen concentration are validated by the analyzed results from X-ray photoelectron spectroscopy (XPS). The obtained memristor device shows the typical resistive switching behavior and nonvolatile memory effects. An analytical device model for Pt/TiO_2-x/TiO₂/TiO_2+x/Pt nano-film memristor is developed based on the fundamental linear relationships between drift-diffusion velocity and the electric field, and boundary conditions are also incorporated in this model. This model is able to predict the relation between variables in the form of explicit formula, which is very critical in memristor-based circuit designs. The measurement results from real devices validate the proposed analytical device model. Some deviations of the model from the measured data are also analyzed and discussed.
ER -