We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q∼105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
Nurul Ashikin Binti DAUD
Keio University
Yuta OOKA
Keio University
Tomohisa TABATA
Keio University
Tomohiro TETSUMOTO
Keio University
Takasumi TANABE
Keio University
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Nurul Ashikin Binti DAUD, Yuta OOKA, Tomohisa TABATA, Tomohiro TETSUMOTO, Takasumi TANABE, "Electro-Optic Modulator Based on Photolithography Fabricated p-i-n Integrated Photonic Crystal Nanocavity" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 8, pp. 670-674, August 2017, doi: 10.1587/transele.E100.C.670.
Abstract: We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q∼105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.670/_p
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@ARTICLE{e100-c_8_670,
author={Nurul Ashikin Binti DAUD, Yuta OOKA, Tomohisa TABATA, Tomohiro TETSUMOTO, Takasumi TANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electro-Optic Modulator Based on Photolithography Fabricated p-i-n Integrated Photonic Crystal Nanocavity},
year={2017},
volume={E100-C},
number={8},
pages={670-674},
abstract={We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q∼105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.},
keywords={},
doi={10.1587/transele.E100.C.670},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Electro-Optic Modulator Based on Photolithography Fabricated p-i-n Integrated Photonic Crystal Nanocavity
T2 - IEICE TRANSACTIONS on Electronics
SP - 670
EP - 674
AU - Nurul Ashikin Binti DAUD
AU - Yuta OOKA
AU - Tomohisa TABATA
AU - Tomohiro TETSUMOTO
AU - Takasumi TANABE
PY - 2017
DO - 10.1587/transele.E100.C.670
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2017
AB - We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q∼105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
ER -