Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs

Takayuki MORI; Jiro IDA; Shota INOUE; Takahiro YOSHIDA

doi:10.1587/transele.E101.C.334

Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs

Takayuki MORI, Jiro IDA, Shota INOUE, Takahiro YOSHIDA

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Summary :

We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.5 pp.334-337

Publication Date: 2018/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.334

Type of Manuscript: BRIEF PAPER

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Authors

Takayuki MORI
  Kanazawa Institute of Technology
Jiro IDA
  Kanazawa Institute of Technology
Shota INOUE
  Kanazawa Institute of Technology
Takahiro YOSHIDA
  Kanazawa Institute of Technology

Keyword

SOI, steep subthreshold slope, floating body effect, feedback, hysteresis

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Takayuki MORI, Jiro IDA, Shota INOUE, Takahiro YOSHIDA, "Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 5, pp. 334-337, May 2018, doi: 10.1587/transele.E101.C.334.
Abstract: We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.334/_p

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@ARTICLE{e101-c_5_334,
author={Takayuki MORI, Jiro IDA, Shota INOUE, Takahiro YOSHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs},
year={2018},
volume={E101-C},
number={5},
pages={334-337},
abstract={We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.},
keywords={},
doi={10.1587/transele.E101.C.334},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 334
EP - 337
AU - Takayuki MORI
AU - Jiro IDA
AU - Shota INOUE
AU - Takahiro YOSHIDA
PY - 2018
DO - 10.1587/transele.E101.C.334
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.
ER -