High Speed 1.1-µm-Range InGaAs-Based VCSELs

Naofumi SUZUKI; Takayoshi ANAN; Hiroshi HATAKEYAMA; Kimiyoshi FUKATSU; Kenichiro YASHIKI; Keiichi TOKUTOME; Takeshi AKAGAWA; Masayoshi TSUJI

doi:10.1587/transele.E92.C.942

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High Speed 1.1-µm-Range InGaAs-Based VCSELs

Naofumi SUZUKI, Takayoshi ANAN, Hiroshi HATAKEYAMA, Kimiyoshi FUKATSU, Kenichiro YASHIKI, Keiichi TOKUTOME, Takeshi AKAGAWA, Masayoshi TSUJI

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Summary :

We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm². We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.

Publication: IEICE TRANSACTIONS on Electronics Vol.E92-C No.7 pp.942-950

Publication Date: 2009/07/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E92.C.942

Type of Manuscript: Special Section INVITED PAPER (Special Section on Recent Advances in Ultra-high-speed Photonic Devices for Next-generation Optical Fiber Communications)

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Naofumi SUZUKI, Takayoshi ANAN, Hiroshi HATAKEYAMA, Kimiyoshi FUKATSU, Kenichiro YASHIKI, Keiichi TOKUTOME, Takeshi AKAGAWA, Masayoshi TSUJI, "High Speed 1.1-µm-Range InGaAs-Based VCSELs" in IEICE TRANSACTIONS on Electronics, vol. E92-C, no. 7, pp. 942-950, July 2009, doi: 10.1587/transele.E92.C.942.
Abstract: We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm². We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.942/_p

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@ARTICLE{e92-c_7_942,
author={Naofumi SUZUKI, Takayoshi ANAN, Hiroshi HATAKEYAMA, Kimiyoshi FUKATSU, Kenichiro YASHIKI, Keiichi TOKUTOME, Takeshi AKAGAWA, Masayoshi TSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed 1.1-µm-Range InGaAs-Based VCSELs},
year={2009},
volume={E92-C},
number={7},
pages={942-950},
abstract={We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm². We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.},
keywords={},
doi={10.1587/transele.E92.C.942},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - High Speed 1.1-µm-Range InGaAs-Based VCSELs
T2 - IEICE TRANSACTIONS on Electronics
SP - 942
EP - 950
AU - Naofumi SUZUKI
AU - Takayoshi ANAN
AU - Hiroshi HATAKEYAMA
AU - Kimiyoshi FUKATSU
AU - Kenichiro YASHIKI
AU - Keiichi TOKUTOME
AU - Takeshi AKAGAWA
AU - Masayoshi TSUJI
PY - 2009
DO - 10.1587/transele.E92.C.942
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2009
AB - We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm². We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.
ER -