High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration

Masatake HANGAI; Yukinobu TARUI; Yoshitaka KAMO; Morishige HIEDA; Masatoshi NAKAYAMA

doi:10.1587/transele.E94.C.1533

High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration

Masatake HANGAI, Yukinobu TARUI, Yoshitaka KAMO, Morishige HIEDA, Masatoshi NAKAYAMA

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High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.

Publication: IEICE TRANSACTIONS on Electronics Vol.E94-C No.10 pp.1533-1538

Publication Date: 2011/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E94.C.1533

Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)

Category: Active Devices and Circuits

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Masatake HANGAI, Yukinobu TARUI, Yoshitaka KAMO, Morishige HIEDA, Masatoshi NAKAYAMA, "High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration" in IEICE TRANSACTIONS on Electronics, vol. E94-C, no. 10, pp. 1533-1538, October 2011, doi: 10.1587/transele.E94.C.1533.
Abstract: High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1533/_p

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@ARTICLE{e94-c_10_1533,
author={Masatake HANGAI, Yukinobu TARUI, Yoshitaka KAMO, Morishige HIEDA, Masatoshi NAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration},
year={2011},
volume={E94-C},
number={10},
pages={1533-1538},
abstract={High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.},
keywords={},
doi={10.1587/transele.E94.C.1533},
ISSN={1745-1353},
month={October},}

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TY - JOUR
TI - High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration
T2 - IEICE TRANSACTIONS on Electronics
SP - 1533
EP - 1538
AU - Masatake HANGAI
AU - Yukinobu TARUI
AU - Yoshitaka KAMO
AU - Morishige HIEDA
AU - Masatoshi NAKAYAMA
PY - 2011
DO - 10.1587/transele.E94.C.1533
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2011
AB - High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.
ER -