This paper presents an ultra-wideband amplifier embedded with band-pass filter design. The scattering parameters of a frequency-domain GaAs field effect transistor are converted into z-domain representations by employing the weighted linear least squares method. A least squares scheme is employed to obtain characteristic impedances of transmission line elements that form the amplifier having a flat gain in the passband and good fall-off selectivity in the stopband. Experimental results illustrate the validity of the proposed design method.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Chih-Hao LU, Ching-Wen HSUE, Bin-Chang CHIEU, Hsiu-Wei LIU, "Design of Broadband Amplifier Embedded with Band-Pass Filter Using Discrete-Time Technique" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 882-889, May 2011, doi: 10.1587/transele.E94.C.882.
Abstract: This paper presents an ultra-wideband amplifier embedded with band-pass filter design. The scattering parameters of a frequency-domain GaAs field effect transistor are converted into z-domain representations by employing the weighted linear least squares method. A least squares scheme is employed to obtain characteristic impedances of transmission line elements that form the amplifier having a flat gain in the passband and good fall-off selectivity in the stopband. Experimental results illustrate the validity of the proposed design method.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.882/_p
Copy
@ARTICLE{e94-c_5_882,
author={Chih-Hao LU, Ching-Wen HSUE, Bin-Chang CHIEU, Hsiu-Wei LIU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design of Broadband Amplifier Embedded with Band-Pass Filter Using Discrete-Time Technique},
year={2011},
volume={E94-C},
number={5},
pages={882-889},
abstract={This paper presents an ultra-wideband amplifier embedded with band-pass filter design. The scattering parameters of a frequency-domain GaAs field effect transistor are converted into z-domain representations by employing the weighted linear least squares method. A least squares scheme is employed to obtain characteristic impedances of transmission line elements that form the amplifier having a flat gain in the passband and good fall-off selectivity in the stopband. Experimental results illustrate the validity of the proposed design method.},
keywords={},
doi={10.1587/transele.E94.C.882},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Design of Broadband Amplifier Embedded with Band-Pass Filter Using Discrete-Time Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 882
EP - 889
AU - Chih-Hao LU
AU - Ching-Wen HSUE
AU - Bin-Chang CHIEU
AU - Hsiu-Wei LIU
PY - 2011
DO - 10.1587/transele.E94.C.882
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - This paper presents an ultra-wideband amplifier embedded with band-pass filter design. The scattering parameters of a frequency-domain GaAs field effect transistor are converted into z-domain representations by employing the weighted linear least squares method. A least squares scheme is employed to obtain characteristic impedances of transmission line elements that form the amplifier having a flat gain in the passband and good fall-off selectivity in the stopband. Experimental results illustrate the validity of the proposed design method.
ER -