An Area Efficiency Hybrid Decoupling Scheme for Charge Pump Noise Suppression in Non-volatile Memory

Mengshu HUANG; Leona OKAMURA; Tsutomu YOSHIHARA

doi:10.1587/transele.E94.C.968

An Area Efficiency Hybrid Decoupling Scheme for Charge Pump Noise Suppression in Non-volatile Memory

Mengshu HUANG, Leona OKAMURA, Tsutomu YOSHIHARA

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An area efficiency hybrid decoupling scheme is proposed to suppress the charge pump noise during F-N tunneling program in non-volatile memory (NVM). The proposed scheme is focused on suppressing the average noise power in frequency domain aspect, which is more suitable for the program error reduction in NVMs. The concept of active capacitor is utilized. Feed forward effect of the amplifier is firstly considered in the impedance analysis, and a trade-off relation between in-band and out-band frequency noise decoupling performance is shown. A fast optimization based on average noise power is made to achieve minimum error in the F-N tunneling program. Simulation results show very stable output voltage in different load conditions, the average ripple voltage is 17 mV with up to 20 dB noise-suppression-ratio (NSR), and the F-N tunneling program error is less than 5 mV for a 800 µs program pulse. A test chip is also fabricated in 0.18 µm technology. The area overhead of the proposed scheme is 2%. The measurement results show 24.4 mV average ripple voltage compared to 72.3 mV of the conventional one with the same decoupling capacitance size, while the noise power suppression achieves 15.4 dB.

Publication: IEICE TRANSACTIONS on Electronics Vol.E94-C No.6 pp.968-976

Publication Date: 2011/06/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E94.C.968

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)

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Mengshu HUANG, Leona OKAMURA, Tsutomu YOSHIHARA, "An Area Efficiency Hybrid Decoupling Scheme for Charge Pump Noise Suppression in Non-volatile Memory" in IEICE TRANSACTIONS on Electronics, vol. E94-C, no. 6, pp. 968-976, June 2011, doi: 10.1587/transele.E94.C.968.
Abstract: An area efficiency hybrid decoupling scheme is proposed to suppress the charge pump noise during F-N tunneling program in non-volatile memory (NVM). The proposed scheme is focused on suppressing the average noise power in frequency domain aspect, which is more suitable for the program error reduction in NVMs. The concept of active capacitor is utilized. Feed forward effect of the amplifier is firstly considered in the impedance analysis, and a trade-off relation between in-band and out-band frequency noise decoupling performance is shown. A fast optimization based on average noise power is made to achieve minimum error in the F-N tunneling program. Simulation results show very stable output voltage in different load conditions, the average ripple voltage is 17 mV with up to 20 dB noise-suppression-ratio (NSR), and the F-N tunneling program error is less than 5 mV for a 800 µs program pulse. A test chip is also fabricated in 0.18 µm technology. The area overhead of the proposed scheme is 2%. The measurement results show 24.4 mV average ripple voltage compared to 72.3 mV of the conventional one with the same decoupling capacitance size, while the noise power suppression achieves 15.4 dB.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.968/_p

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@ARTICLE{e94-c_6_968,
author={Mengshu HUANG, Leona OKAMURA, Tsutomu YOSHIHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Area Efficiency Hybrid Decoupling Scheme for Charge Pump Noise Suppression in Non-volatile Memory},
year={2011},
volume={E94-C},
number={6},
pages={968-976},
abstract={An area efficiency hybrid decoupling scheme is proposed to suppress the charge pump noise during F-N tunneling program in non-volatile memory (NVM). The proposed scheme is focused on suppressing the average noise power in frequency domain aspect, which is more suitable for the program error reduction in NVMs. The concept of active capacitor is utilized. Feed forward effect of the amplifier is firstly considered in the impedance analysis, and a trade-off relation between in-band and out-band frequency noise decoupling performance is shown. A fast optimization based on average noise power is made to achieve minimum error in the F-N tunneling program. Simulation results show very stable output voltage in different load conditions, the average ripple voltage is 17 mV with up to 20 dB noise-suppression-ratio (NSR), and the F-N tunneling program error is less than 5 mV for a 800 µs program pulse. A test chip is also fabricated in 0.18 µm technology. The area overhead of the proposed scheme is 2%. The measurement results show 24.4 mV average ripple voltage compared to 72.3 mV of the conventional one with the same decoupling capacitance size, while the noise power suppression achieves 15.4 dB.},
keywords={},
doi={10.1587/transele.E94.C.968},
ISSN={1745-1353},
month={June},}

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TY - JOUR
TI - An Area Efficiency Hybrid Decoupling Scheme for Charge Pump Noise Suppression in Non-volatile Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 968
EP - 976
AU - Mengshu HUANG
AU - Leona OKAMURA
AU - Tsutomu YOSHIHARA
PY - 2011
DO - 10.1587/transele.E94.C.968
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2011
AB - An area efficiency hybrid decoupling scheme is proposed to suppress the charge pump noise during F-N tunneling program in non-volatile memory (NVM). The proposed scheme is focused on suppressing the average noise power in frequency domain aspect, which is more suitable for the program error reduction in NVMs. The concept of active capacitor is utilized. Feed forward effect of the amplifier is firstly considered in the impedance analysis, and a trade-off relation between in-band and out-band frequency noise decoupling performance is shown. A fast optimization based on average noise power is made to achieve minimum error in the F-N tunneling program. Simulation results show very stable output voltage in different load conditions, the average ripple voltage is 17 mV with up to 20 dB noise-suppression-ratio (NSR), and the F-N tunneling program error is less than 5 mV for a 800 µs program pulse. A test chip is also fabricated in 0.18 µm technology. The area overhead of the proposed scheme is 2%. The measurement results show 24.4 mV average ripple voltage compared to 72.3 mV of the conventional one with the same decoupling capacitance size, while the noise power suppression achieves 15.4 dB.
ER -