Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se<SUB>2</SUB> Films

Masahiro TAHASHI; Kenji IINUMA; Hideo GOTO; Kenji YOSHINO; Makoto TAKAHASHI; Toshiyuki IDO

doi:10.1587/transele.E95.C.1304

Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se₂ Films

Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO

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Polycrystalline Cu(In,Ga)Se₂ (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH₃)₂), which is a less hazardous Se source than H₂Se gas. CIGS films were fabricated at various Se(CH₃)₂ supply rates. We investigated the effect of the Se(CH₃)₂ supply rate on the crystal phase and surface morphology of the films.

Publication: IEICE TRANSACTIONS on Electronics Vol.E95-C No.7 pp.1304-1306

Publication Date: 2012/07/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E95.C.1304

Type of Manuscript: BRIEF PAPER

Category: Semiconductor Materials and Devices

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Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO, "Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films" in IEICE TRANSACTIONS on Electronics, vol. E95-C, no. 7, pp. 1304-1306, July 2012, doi: 10.1587/transele.E95.C.1304.
Abstract: Polycrystalline Cu(In,Ga)Se₂ (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH₃)₂), which is a less hazardous Se source than H₂Se gas. CIGS films were fabricated at various Se(CH₃)₂ supply rates. We investigated the effect of the Se(CH₃)₂ supply rate on the crystal phase and surface morphology of the films.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1304/_p

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@ARTICLE{e95-c_7_1304,
author={Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films},
year={2012},
volume={E95-C},
number={7},
pages={1304-1306},
abstract={Polycrystalline Cu(In,Ga)Se₂ (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH₃)₂), which is a less hazardous Se source than H₂Se gas. CIGS films were fabricated at various Se(CH₃)₂ supply rates. We investigated the effect of the Se(CH₃)₂ supply rate on the crystal phase and surface morphology of the films.},
keywords={},
doi={10.1587/transele.E95.C.1304},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1304
EP - 1306
AU - Masahiro TAHASHI
AU - Kenji IINUMA
AU - Hideo GOTO
AU - Kenji YOSHINO
AU - Makoto TAKAHASHI
AU - Toshiyuki IDO
PY - 2012
DO - 10.1587/transele.E95.C.1304
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2012
AB - Polycrystalline Cu(In,Ga)Se₂ (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH₃)₂), which is a less hazardous Se source than H₂Se gas. CIGS films were fabricated at various Se(CH₃)₂ supply rates. We investigated the effect of the Se(CH₃)₂ supply rate on the crystal phase and surface morphology of the films.
ER -