Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Min Woo RYU; Sung-Ho KIM; Hee Cheol HWANG; Kibog PARK; Kyung Rok KIM

doi:10.1587/transele.E96.C.649

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Min Woo RYU, Sung-Ho KIM, Hee Cheol HWANG, Kibog PARK, Kyung Rok KIM

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In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and “overdamped” plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled nonresonant plasma-wave physics and continuity equation on the TCAD platform, the alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions with a external capacitance between the gate and drain. The average propagation length and density of a quasi-plasma have been confirmed as around 100 nm and 110¹⁹/cm³, respectively, through the transient simulation of Si FETs with the modulated 2DEG at 0.7 THz. We investigated the incoming radiation frequency dependencies on the characteristics of the plasmonic THz detector operating in sub-THz nonresonant regime by using the quasi-plasma modeling on TCAD platform. The simulated dependences of the photoresponse with quasi-plasma 2DEG modeling on the structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si FET structure. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.

Publication: IEICE TRANSACTIONS on Electronics Vol.E96-C No.5 pp.649-654

Publication Date: 2013/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E96.C.649

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Min Woo RYU, Sung-Ho KIM, Hee Cheol HWANG, Kibog PARK, Kyung Rok KIM, "Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors" in IEICE TRANSACTIONS on Electronics, vol. E96-C, no. 5, pp. 649-654, May 2013, doi: 10.1587/transele.E96.C.649.
Abstract: In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and “overdamped” plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled nonresonant plasma-wave physics and continuity equation on the TCAD platform, the alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions with a external capacitance between the gate and drain. The average propagation length and density of a quasi-plasma have been confirmed as around 100 nm and 110¹⁹/cm³, respectively, through the transient simulation of Si FETs with the modulated 2DEG at 0.7 THz. We investigated the incoming radiation frequency dependencies on the characteristics of the plasmonic THz detector operating in sub-THz nonresonant regime by using the quasi-plasma modeling on TCAD platform. The simulated dependences of the photoresponse with quasi-plasma 2DEG modeling on the structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si FET structure. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.649/_p

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@ARTICLE{e96-c_5_649,
author={Min Woo RYU, Sung-Ho KIM, Hee Cheol HWANG, Kibog PARK, Kyung Rok KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors},
year={2013},
volume={E96-C},
number={5},
pages={649-654},
abstract={In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and “overdamped” plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled nonresonant plasma-wave physics and continuity equation on the TCAD platform, the alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions with a external capacitance between the gate and drain. The average propagation length and density of a quasi-plasma have been confirmed as around 100 nm and 110¹⁹/cm³, respectively, through the transient simulation of Si FETs with the modulated 2DEG at 0.7 THz. We investigated the incoming radiation frequency dependencies on the characteristics of the plasmonic THz detector operating in sub-THz nonresonant regime by using the quasi-plasma modeling on TCAD platform. The simulated dependences of the photoresponse with quasi-plasma 2DEG modeling on the structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si FET structure. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.},
keywords={},
doi={10.1587/transele.E96.C.649},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 649
EP - 654
AU - Min Woo RYU
AU - Sung-Ho KIM
AU - Hee Cheol HWANG
AU - Kibog PARK
AU - Kyung Rok KIM
PY - 2013
DO - 10.1587/transele.E96.C.649
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2013
AB - In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and “overdamped” plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled nonresonant plasma-wave physics and continuity equation on the TCAD platform, the alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions with a external capacitance between the gate and drain. The average propagation length and density of a quasi-plasma have been confirmed as around 100 nm and 110¹⁹/cm³, respectively, through the transient simulation of Si FETs with the modulated 2DEG at 0.7 THz. We investigated the incoming radiation frequency dependencies on the characteristics of the plasmonic THz detector operating in sub-THz nonresonant regime by using the quasi-plasma modeling on TCAD platform. The simulated dependences of the photoresponse with quasi-plasma 2DEG modeling on the structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si FET structure. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.
ER -