Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Jun TAYA; Kazuki KOJIMA; Tomonori MUKUDA; Akihiro NAKASHIMA; Yuki SAGAWA; Tokiyoshi MATSUDA; Mutsumi KIMURA

doi:10.1587/transele.E97.C.1068

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Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Jun TAYA, Kazuki KOJIMA, Tomonori MUKUDA, Akihiro NAKASHIMA, Yuki SAGAWA, Tokiyoshi MATSUDA, Mutsumi KIMURA

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Summary :

We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.11 pp.1068-1073

Publication Date: 2014/11/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.1068

Type of Manuscript: Special Section INVITED PAPER (Special Section on Electronic Displays)

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Authors

Jun TAYA
  Ryukoku University
Kazuki KOJIMA
  Ryukoku University
Tomonori MUKUDA
  Ryukoku University
Akihiro NAKASHIMA
  Ryukoku University
Yuki SAGAWA
  Ryukoku University
Tokiyoshi MATSUDA
  Ryukoku University
Mutsumi KIMURA
  Ryukoku University

Keyword

temperature sensor, ring oscillator, poly-Si, thin-film transistor (TFT), lightly-doped drain structure (LDD), offset drain structure

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Jun TAYA, Kazuki KOJIMA, Tomonori MUKUDA, Akihiro NAKASHIMA, Yuki SAGAWA, Tokiyoshi MATSUDA, Mutsumi KIMURA, "Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 11, pp. 1068-1073, November 2014, doi: 10.1587/transele.E97.C.1068.
Abstract: We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.1068/_p

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@ARTICLE{e97-c_11_1068,
author={Jun TAYA, Kazuki KOJIMA, Tomonori MUKUDA, Akihiro NAKASHIMA, Yuki SAGAWA, Tokiyoshi MATSUDA, Mutsumi KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures},
year={2014},
volume={E97-C},
number={11},
pages={1068-1073},
abstract={We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.},
keywords={},
doi={10.1587/transele.E97.C.1068},
ISSN={1745-1353},
month={November},}

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TY - JOUR
TI - Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1068
EP - 1073
AU - Jun TAYA
AU - Kazuki KOJIMA
AU - Tomonori MUKUDA
AU - Akihiro NAKASHIMA
AU - Yuki SAGAWA
AU - Tokiyoshi MATSUDA
AU - Mutsumi KIMURA
PY - 2014
DO - 10.1587/transele.E97.C.1068
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2014
AB - We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightly-doped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device.
ER -