Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology

Biwei LIU; Yankang DU; Kai ZHANG

doi:10.1587/transele.E97.C.455

Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology

Biwei LIU, Yankang DU, Kai ZHANG

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Many studies have reported that the single-event transient (SET) width increases with temperature. However, the mechanism for this temperature dependency is not clear, especially for an N-hit SET. In this study, TCAD simulations are carried out to study the temperature dependence of N-hit SETs in detail. Several possible factors are examined, and the results show that the temperature dependence in bulk devices is due to the decrease in the carrier mobility with temperature in both the struck NMOS and the pull-up PMOS. In contrast, the temperature dependence in SOI devices is due to the decrease in the diffusion constant and carrier lifetime with temperature, which enhances the parasitic bipolar effect.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.5 pp.455-459

Publication Date: 2014/05/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.455

Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

Authors

Biwei LIU
  National University of Defense Technology
Yankang DU
  National University of Defense Technology
Kai ZHANG
  National University of Defense Technology

Keyword

N-hit SET, temperature dependency, carrier mobility, carrier lifetime

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Biwei LIU, Yankang DU, Kai ZHANG, "Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 5, pp. 455-459, May 2014, doi: 10.1587/transele.E97.C.455.
Abstract: Many studies have reported that the single-event transient (SET) width increases with temperature. However, the mechanism for this temperature dependency is not clear, especially for an N-hit SET. In this study, TCAD simulations are carried out to study the temperature dependence of N-hit SETs in detail. Several possible factors are examined, and the results show that the temperature dependence in bulk devices is due to the decrease in the carrier mobility with temperature in both the struck NMOS and the pull-up PMOS. In contrast, the temperature dependence in SOI devices is due to the decrease in the diffusion constant and carrier lifetime with temperature, which enhances the parasitic bipolar effect.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.455/_p

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@ARTICLE{e97-c_5_455,
author={Biwei LIU, Yankang DU, Kai ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology},
year={2014},
volume={E97-C},
number={5},
pages={455-459},
abstract={Many studies have reported that the single-event transient (SET) width increases with temperature. However, the mechanism for this temperature dependency is not clear, especially for an N-hit SET. In this study, TCAD simulations are carried out to study the temperature dependence of N-hit SETs in detail. Several possible factors are examined, and the results show that the temperature dependence in bulk devices is due to the decrease in the carrier mobility with temperature in both the struck NMOS and the pull-up PMOS. In contrast, the temperature dependence in SOI devices is due to the decrease in the diffusion constant and carrier lifetime with temperature, which enhances the parasitic bipolar effect.},
keywords={},
doi={10.1587/transele.E97.C.455},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 455
EP - 459
AU - Biwei LIU
AU - Yankang DU
AU - Kai ZHANG
PY - 2014
DO - 10.1587/transele.E97.C.455
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2014
AB - Many studies have reported that the single-event transient (SET) width increases with temperature. However, the mechanism for this temperature dependency is not clear, especially for an N-hit SET. In this study, TCAD simulations are carried out to study the temperature dependence of N-hit SETs in detail. Several possible factors are examined, and the results show that the temperature dependence in bulk devices is due to the decrease in the carrier mobility with temperature in both the struck NMOS and the pull-up PMOS. In contrast, the temperature dependence in SOI devices is due to the decrease in the diffusion constant and carrier lifetime with temperature, which enhances the parasitic bipolar effect.
ER -