Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement

Taishi NOMA; Dai TAGUCHI; Takaaki MANAKA; Mitsumasa IWAMOTO

doi:10.1587/transele.E98.C.86

Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement

Taishi NOMA, Dai TAGUCHI, Takaaki MANAKA, Mitsumasa IWAMOTO

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Displacement current measurement (DCM) is widely used as a method for analyzing carrier behaviors of organic devices. Carrier behaviors are analyzed using transient currents. On the other hand, electric-field-induced optical second-harmonic generation (EFISHG) measurement is capable of directly probing carrier motions in organic devices, where the migration of electric field stemmed from carriers is measured. In this study, we employed the DCM and EFISHG measurements for analyzing interfacial carrier behaviors in Au/pentacene/polyimide (PI)/indium-tin-oxide (ITO) double layer organic devices, where interfacial accumulated charges and electric fields formed in the pentacene layer were explored.

Publication: IEICE TRANSACTIONS on Electronics Vol.E98-C No.2 pp.86-90

Publication Date: 2015/02/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E98.C.86

Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)

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Authors

Taishi NOMA
  Tokyo Institute of Technology
Dai TAGUCHI
  Tokyo Institute of Technology
Takaaki MANAKA
  Tokyo Institute of Technology
Mitsumasa IWAMOTO
  Tokyo Institute of Technology

Keyword

EFISHG, DCM, interfacial charges, electric field

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Taishi NOMA, Dai TAGUCHI, Takaaki MANAKA, Mitsumasa IWAMOTO, "Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement" in IEICE TRANSACTIONS on Electronics, vol. E98-C, no. 2, pp. 86-90, February 2015, doi: 10.1587/transele.E98.C.86.
Abstract: Displacement current measurement (DCM) is widely used as a method for analyzing carrier behaviors of organic devices. Carrier behaviors are analyzed using transient currents. On the other hand, electric-field-induced optical second-harmonic generation (EFISHG) measurement is capable of directly probing carrier motions in organic devices, where the migration of electric field stemmed from carriers is measured. In this study, we employed the DCM and EFISHG measurements for analyzing interfacial carrier behaviors in Au/pentacene/polyimide (PI)/indium-tin-oxide (ITO) double layer organic devices, where interfacial accumulated charges and electric fields formed in the pentacene layer were explored.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.86/_p

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@ARTICLE{e98-c_2_86,
author={Taishi NOMA, Dai TAGUCHI, Takaaki MANAKA, Mitsumasa IWAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement},
year={2015},
volume={E98-C},
number={2},
pages={86-90},
abstract={Displacement current measurement (DCM) is widely used as a method for analyzing carrier behaviors of organic devices. Carrier behaviors are analyzed using transient currents. On the other hand, electric-field-induced optical second-harmonic generation (EFISHG) measurement is capable of directly probing carrier motions in organic devices, where the migration of electric field stemmed from carriers is measured. In this study, we employed the DCM and EFISHG measurements for analyzing interfacial carrier behaviors in Au/pentacene/polyimide (PI)/indium-tin-oxide (ITO) double layer organic devices, where interfacial accumulated charges and electric fields formed in the pentacene layer were explored.},
keywords={},
doi={10.1587/transele.E98.C.86},
ISSN={1745-1353},
month={February},}

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TY - JOUR
TI - Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 86
EP - 90
AU - Taishi NOMA
AU - Dai TAGUCHI
AU - Takaaki MANAKA
AU - Mitsumasa IWAMOTO
PY - 2015
DO - 10.1587/transele.E98.C.86
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2015
AB - Displacement current measurement (DCM) is widely used as a method for analyzing carrier behaviors of organic devices. Carrier behaviors are analyzed using transient currents. On the other hand, electric-field-induced optical second-harmonic generation (EFISHG) measurement is capable of directly probing carrier motions in organic devices, where the migration of electric field stemmed from carriers is measured. In this study, we employed the DCM and EFISHG measurements for analyzing interfacial carrier behaviors in Au/pentacene/polyimide (PI)/indium-tin-oxide (ITO) double layer organic devices, where interfacial accumulated charges and electric fields formed in the pentacene layer were explored.
ER -