A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications

Naoki HASEGAWA; Naoki SHINOHARA; Shigeo KAWASAKI

doi:10.1587/transele.E99.C.1140

A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications

Naoki HASEGAWA, Naoki SHINOHARA, Shigeo KAWASAKI

Full Text Views

0

Share
Cite this

Summary :

The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.

Publication: IEICE TRANSACTIONS on Electronics Vol.E99-C No.10 pp.1140-1146

Publication Date: 2016/10/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E99.C.1140

Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)

Category

Authors

Naoki HASEGAWA
  Kyoto University
Naoki SHINOHARA
  Kyoto University
Shigeo KAWASAKI
  Japan Aerospace eXploration Agency (JAXA)

Keyword

solid-state power amplifier, GaN HEMT, radial combiner and divider, CW-drive

Cite this

Copy

Naoki HASEGAWA, Naoki SHINOHARA, Shigeo KAWASAKI, "A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications" in IEICE TRANSACTIONS on Electronics, vol. E99-C, no. 10, pp. 1140-1146, October 2016, doi: 10.1587/transele.E99.C.1140.
Abstract: The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.1140/_p

Copy

@ARTICLE{e99-c_10_1140,
author={Naoki HASEGAWA, Naoki SHINOHARA, Shigeo KAWASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications},
year={2016},
volume={E99-C},
number={10},
pages={1140-1146},
abstract={The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.},
keywords={},
doi={10.1587/transele.E99.C.1140},
ISSN={1745-1353},
month={October},}

Copy

TY - JOUR
TI - A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1140
EP - 1146
AU - Naoki HASEGAWA
AU - Naoki SHINOHARA
AU - Shigeo KAWASAKI
PY - 2016
DO - 10.1587/transele.E99.C.1140
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2016
AB - The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.
ER -