Reducing Aging Effects on Ternary CAM

Ing-Chao LIN; Yen-Han LEE; Sheng-Wei WANG

doi:10.1587/transele.E99.C.878

Reducing Aging Effects on Ternary CAM

Ing-Chao LIN, Yen-Han LEE, Sheng-Wei WANG

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Ternary content addressable memory (TCAM), which can store 0, 1, or X in its cells, is widely used to store routing tables in network routers. Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), which increase V_th and degrade transistor switching speed, have become major reliability challenges. This study analyzes the signal probability of routing tables. The results show that many cells retain static stress and suffer significant degradation caused by NBTI and PBTI effects. The bit flipping technique is improved and proactive power gating recovery is proposed to mitigate NBTI and PBTI effects. In order to maintain the functionality of TCAM after bit flipping, a novel TCAM cell design is proposed. Simulation results show that compared to the original architecture, the bit flipping technique improves read static noise margin (SNM) for data and mask cells by 16.84% and 29.94%, respectively, and reduces search time degradation by 12.95%. The power gating technique improves read SNM for data and mask cells by 12.31% and 20.92%, respectively, and reduces search time degradation by 17.57%. When both techniques are used, read SNM for data and mask cells is improved by 17.74% and 30.53%, respectively, and search time degradation is reduced by 21.01%.

Publication: IEICE TRANSACTIONS on Electronics Vol.E99-C No.7 pp.878-891

Publication Date: 2016/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E99.C.878

Type of Manuscript: PAPER

Category: Integrated Electronics

Authors

Ing-Chao LIN
  National Cheng Kung University
Yen-Han LEE
  National Cheng Kung University
Sheng-Wei WANG
  National Cheng Kung University

Keyword

ternary content addressable memory (CAM), negative bias temperature instability (NBTI), positive bias temperature instability (PBTI), reliability, power gating

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Ing-Chao LIN, Yen-Han LEE, Sheng-Wei WANG, "Reducing Aging Effects on Ternary CAM" in IEICE TRANSACTIONS on Electronics, vol. E99-C, no. 7, pp. 878-891, July 2016, doi: 10.1587/transele.E99.C.878.
Abstract: Ternary content addressable memory (TCAM), which can store 0, 1, or X in its cells, is widely used to store routing tables in network routers. Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), which increase V_th and degrade transistor switching speed, have become major reliability challenges. This study analyzes the signal probability of routing tables. The results show that many cells retain static stress and suffer significant degradation caused by NBTI and PBTI effects. The bit flipping technique is improved and proactive power gating recovery is proposed to mitigate NBTI and PBTI effects. In order to maintain the functionality of TCAM after bit flipping, a novel TCAM cell design is proposed. Simulation results show that compared to the original architecture, the bit flipping technique improves read static noise margin (SNM) for data and mask cells by 16.84% and 29.94%, respectively, and reduces search time degradation by 12.95%. The power gating technique improves read SNM for data and mask cells by 12.31% and 20.92%, respectively, and reduces search time degradation by 17.57%. When both techniques are used, read SNM for data and mask cells is improved by 17.74% and 30.53%, respectively, and search time degradation is reduced by 21.01%.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.878/_p

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@ARTICLE{e99-c_7_878,
author={Ing-Chao LIN, Yen-Han LEE, Sheng-Wei WANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reducing Aging Effects on Ternary CAM},
year={2016},
volume={E99-C},
number={7},
pages={878-891},
abstract={Ternary content addressable memory (TCAM), which can store 0, 1, or X in its cells, is widely used to store routing tables in network routers. Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), which increase V_th and degrade transistor switching speed, have become major reliability challenges. This study analyzes the signal probability of routing tables. The results show that many cells retain static stress and suffer significant degradation caused by NBTI and PBTI effects. The bit flipping technique is improved and proactive power gating recovery is proposed to mitigate NBTI and PBTI effects. In order to maintain the functionality of TCAM after bit flipping, a novel TCAM cell design is proposed. Simulation results show that compared to the original architecture, the bit flipping technique improves read static noise margin (SNM) for data and mask cells by 16.84% and 29.94%, respectively, and reduces search time degradation by 12.95%. The power gating technique improves read SNM for data and mask cells by 12.31% and 20.92%, respectively, and reduces search time degradation by 17.57%. When both techniques are used, read SNM for data and mask cells is improved by 17.74% and 30.53%, respectively, and search time degradation is reduced by 21.01%.},
keywords={},
doi={10.1587/transele.E99.C.878},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Reducing Aging Effects on Ternary CAM
T2 - IEICE TRANSACTIONS on Electronics
SP - 878
EP - 891
AU - Ing-Chao LIN
AU - Yen-Han LEE
AU - Sheng-Wei WANG
PY - 2016
DO - 10.1587/transele.E99.C.878
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2016
AB - Ternary content addressable memory (TCAM), which can store 0, 1, or X in its cells, is widely used to store routing tables in network routers. Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI), which increase V_th and degrade transistor switching speed, have become major reliability challenges. This study analyzes the signal probability of routing tables. The results show that many cells retain static stress and suffer significant degradation caused by NBTI and PBTI effects. The bit flipping technique is improved and proactive power gating recovery is proposed to mitigate NBTI and PBTI effects. In order to maintain the functionality of TCAM after bit flipping, a novel TCAM cell design is proposed. Simulation results show that compared to the original architecture, the bit flipping technique improves read static noise margin (SNM) for data and mask cells by 16.84% and 29.94%, respectively, and reduces search time degradation by 12.95%. The power gating technique improves read SNM for data and mask cells by 12.31% and 20.92%, respectively, and reduces search time degradation by 17.57%. When both techniques are used, read SNM for data and mask cells is improved by 17.74% and 30.53%, respectively, and search time degradation is reduced by 21.01%.
ER -