A Novel Broad-Band MMIC VCO Using an Active Inductor

Hitoshi HAYASHI; Masahiro MURAGUCHI

A Novel Broad-Band MMIC VCO Using an Active Inductor

Hitoshi HAYASHI, Masahiro MURAGUCHI

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This paper proposes a novel broad-band MMIC VCO using an active inductor. This VCO is composed of a serial resonant circuit, in which the capacitor is in series with an active inductor that has a constant negative resistance. Since the inductance value of this active inductor is inversely proportional to the square of the transconductance and can vary widely with the FETs gate bias control, a broad-band oscillation tuning range can be obtained. Furthermore, since this active inductor can generate a constant negative resistance of more than 50Ω, the proposed VCO can oscillate against a 50Ω output load immediately without using additional impedance transformers. We have fabricated the VCO using a GaAs MESFET process. A frequency tuning range of more than 50%, from 1.56 to 2.85 GHz, with an output power of 4.41.0 dBm, was obtained. With a carrier of 2. 07 GHz, the phase noise at 1-MHz offset was less than -110 dBc/Hz. The chip size was less than 0. 61 mm², and the power consumption was 80 mW. This broad-band analog design can be used at microwave frequencies in PLL applications as a compact alternative to other types of oscillator circuits.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E81-A No.2 pp.224-229

Publication Date: 1998/02/25

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Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques in the Digital-Oriented Era)

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Hitoshi HAYASHI, Masahiro MURAGUCHI, "A Novel Broad-Band MMIC VCO Using an Active Inductor" in IEICE TRANSACTIONS on Fundamentals, vol. E81-A, no. 2, pp. 224-229, February 1998, doi: .
Abstract: This paper proposes a novel broad-band MMIC VCO using an active inductor. This VCO is composed of a serial resonant circuit, in which the capacitor is in series with an active inductor that has a constant negative resistance. Since the inductance value of this active inductor is inversely proportional to the square of the transconductance and can vary widely with the FETs gate bias control, a broad-band oscillation tuning range can be obtained. Furthermore, since this active inductor can generate a constant negative resistance of more than 50Ω, the proposed VCO can oscillate against a 50Ω output load immediately without using additional impedance transformers. We have fabricated the VCO using a GaAs MESFET process. A frequency tuning range of more than 50%, from 1.56 to 2.85 GHz, with an output power of 4.41.0 dBm, was obtained. With a carrier of 2. 07 GHz, the phase noise at 1-MHz offset was less than -110 dBc/Hz. The chip size was less than 0. 61 mm², and the power consumption was 80 mW. This broad-band analog design can be used at microwave frequencies in PLL applications as a compact alternative to other types of oscillator circuits.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/e81-a_2_224/_p

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@ARTICLE{e81-a_2_224,
author={Hitoshi HAYASHI, Masahiro MURAGUCHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Novel Broad-Band MMIC VCO Using an Active Inductor},
year={1998},
volume={E81-A},
number={2},
pages={224-229},
abstract={This paper proposes a novel broad-band MMIC VCO using an active inductor. This VCO is composed of a serial resonant circuit, in which the capacitor is in series with an active inductor that has a constant negative resistance. Since the inductance value of this active inductor is inversely proportional to the square of the transconductance and can vary widely with the FETs gate bias control, a broad-band oscillation tuning range can be obtained. Furthermore, since this active inductor can generate a constant negative resistance of more than 50Ω, the proposed VCO can oscillate against a 50Ω output load immediately without using additional impedance transformers. We have fabricated the VCO using a GaAs MESFET process. A frequency tuning range of more than 50%, from 1.56 to 2.85 GHz, with an output power of 4.41.0 dBm, was obtained. With a carrier of 2. 07 GHz, the phase noise at 1-MHz offset was less than -110 dBc/Hz. The chip size was less than 0. 61 mm², and the power consumption was 80 mW. This broad-band analog design can be used at microwave frequencies in PLL applications as a compact alternative to other types of oscillator circuits.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - A Novel Broad-Band MMIC VCO Using an Active Inductor
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 224
EP - 229
AU - Hitoshi HAYASHI
AU - Masahiro MURAGUCHI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E81-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 1998
AB - This paper proposes a novel broad-band MMIC VCO using an active inductor. This VCO is composed of a serial resonant circuit, in which the capacitor is in series with an active inductor that has a constant negative resistance. Since the inductance value of this active inductor is inversely proportional to the square of the transconductance and can vary widely with the FETs gate bias control, a broad-band oscillation tuning range can be obtained. Furthermore, since this active inductor can generate a constant negative resistance of more than 50Ω, the proposed VCO can oscillate against a 50Ω output load immediately without using additional impedance transformers. We have fabricated the VCO using a GaAs MESFET process. A frequency tuning range of more than 50%, from 1.56 to 2.85 GHz, with an output power of 4.41.0 dBm, was obtained. With a carrier of 2. 07 GHz, the phase noise at 1-MHz offset was less than -110 dBc/Hz. The chip size was less than 0. 61 mm², and the power consumption was 80 mW. This broad-band analog design can be used at microwave frequencies in PLL applications as a compact alternative to other types of oscillator circuits.
ER -