Construction of Fixed Rate Non-Binary WOM Codes Based on Integer Programming

Yoju FUJINO; Tadashi WADAYAMA

doi:10.1587/transfun.E100.A.2654

Construction of Fixed Rate Non-Binary WOM Codes Based on Integer Programming

Yoju FUJINO, Tadashi WADAYAMA

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In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size M can be sequentially written in the WOM storage at least t^*-times. In this paper, a WOM storage is modeled by a state transition graph. The proposed construction has the following two features. First, it includes a systematic method to determine the encoding regions in the state transition graph. Second, the proposed construction includes a labeling method for states by using integer programming. Several novel WOM codes for q level flash memories with 2 cells are constructed by the proposed construction. They achieve the worst numbers of writes t^* that meet the known upper bound in the range 4≤q≤8, M=8. In addition, we constructed fixed rate non-binary WOM codes with the capability to reduce ICI (inter cell interference) of flash cells. One of the advantages of the proposed construction is its flexibility. It can be applied to various storage devices, to various dimensions (i.e, number of cells), and various kind of additional constraints.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E100-A No.12 pp.2654-2661

Publication Date: 2017/12/01

Publicized

Online ISSN: 1745-1337

DOI: 10.1587/transfun.E100.A.2654

Type of Manuscript: Special Section PAPER (Special Section on Information Theory and Its Applications)

Category: Coding Theory for Strage

Authors

Yoju FUJINO
the Nagoya Institute of Technology
Tadashi WADAYAMA
the Nagoya Institute of Technology

Keyword

WOM codes, flash memories, inter-cell interference, constraint coding

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Yoju FUJINO, Tadashi WADAYAMA, "Construction of Fixed Rate Non-Binary WOM Codes Based on Integer Programming" in IEICE TRANSACTIONS on Fundamentals, vol. E100-A, no. 12, pp. 2654-2661, December 2017, doi: 10.1587/transfun.E100.A.2654.
Abstract: In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size M can be sequentially written in the WOM storage at least t^*-times. In this paper, a WOM storage is modeled by a state transition graph. The proposed construction has the following two features. First, it includes a systematic method to determine the encoding regions in the state transition graph. Second, the proposed construction includes a labeling method for states by using integer programming. Several novel WOM codes for q level flash memories with 2 cells are constructed by the proposed construction. They achieve the worst numbers of writes t^* that meet the known upper bound in the range 4≤q≤8, M=8. In addition, we constructed fixed rate non-binary WOM codes with the capability to reduce ICI (inter cell interference) of flash cells. One of the advantages of the proposed construction is its flexibility. It can be applied to various storage devices, to various dimensions (i.e, number of cells), and various kind of additional constraints.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/transfun.E100.A.2654/_p

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@ARTICLE{e100-a_12_2654,
author={Yoju FUJINO, Tadashi WADAYAMA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Construction of Fixed Rate Non-Binary WOM Codes Based on Integer Programming},
year={2017},
volume={E100-A},
number={12},
pages={2654-2661},
abstract={In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size M can be sequentially written in the WOM storage at least t^*-times. In this paper, a WOM storage is modeled by a state transition graph. The proposed construction has the following two features. First, it includes a systematic method to determine the encoding regions in the state transition graph. Second, the proposed construction includes a labeling method for states by using integer programming. Several novel WOM codes for q level flash memories with 2 cells are constructed by the proposed construction. They achieve the worst numbers of writes t^* that meet the known upper bound in the range 4≤q≤8, M=8. In addition, we constructed fixed rate non-binary WOM codes with the capability to reduce ICI (inter cell interference) of flash cells. One of the advantages of the proposed construction is its flexibility. It can be applied to various storage devices, to various dimensions (i.e, number of cells), and various kind of additional constraints.},
keywords={},
doi={10.1587/transfun.E100.A.2654},
ISSN={1745-1337},
month={December},}

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TY - JOUR
TI - Construction of Fixed Rate Non-Binary WOM Codes Based on Integer Programming
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 2654
EP - 2661
AU - Yoju FUJINO
AU - Tadashi WADAYAMA
PY - 2017
DO - 10.1587/transfun.E100.A.2654
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E100-A
IS - 12
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - December 2017
AB - In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size M can be sequentially written in the WOM storage at least t^*-times. In this paper, a WOM storage is modeled by a state transition graph. The proposed construction has the following two features. First, it includes a systematic method to determine the encoding regions in the state transition graph. Second, the proposed construction includes a labeling method for states by using integer programming. Several novel WOM codes for q level flash memories with 2 cells are constructed by the proposed construction. They achieve the worst numbers of writes t^* that meet the known upper bound in the range 4≤q≤8, M=8. In addition, we constructed fixed rate non-binary WOM codes with the capability to reduce ICI (inter cell interference) of flash cells. One of the advantages of the proposed construction is its flexibility. It can be applied to various storage devices, to various dimensions (i.e, number of cells), and various kind of additional constraints.
ER -