A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise

Qing LIU; Jiangtao SUN; YongJu SUH; Nobuyuki ITOH; Toshihiko YOSHIMASU

doi:10.1587/transfun.E95.A.487

A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise

Qing LIU, Jiangtao SUN, YongJu SUH, Nobuyuki ITOH, Toshihiko YOSHIMASU

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In this paper, a CMOS Class-G supply modulation for polar power amplifiers with high average efficiency and low ripple noise is proposed. In the proposed Class-G supply modulation, the parallel supply modulations which are controlled by switch signals are utilized for low power and high power supplies to increase the average efficiency. A low dropout (LDO) is utilized to suppress the delta-modulated noise and provide a low ripple noise power supply. The proposed supply modulation has high efficiency at large output current as the conventional supply modulation, and it also has high efficiency and low ripple noise at the low output current. To verify the effectiveness of the proposed supply modulation, the proposed supply modulation was designed with 0.13 µm CMOS process. The simulation results show that the proposed supply modulation achieves a maximum efficiency of 85.1%. It achieves an average efficiency of 29.3% and a 7.1% improvement compared with the conventional supply modulations with Class-E power amplifier. The proposed supply modulation also shows an excellent spurious free dynamic range (SFDR) of -73 dBc for output envelope signal.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E95-A No.2 pp.487-497

Publication Date: 2012/02/01

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Online ISSN: 1745-1337

DOI: 10.1587/transfun.E95.A.487

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)

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Qing LIU, Jiangtao SUN, YongJu SUH, Nobuyuki ITOH, Toshihiko YOSHIMASU, "A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise" in IEICE TRANSACTIONS on Fundamentals, vol. E95-A, no. 2, pp. 487-497, February 2012, doi: 10.1587/transfun.E95.A.487.
Abstract: In this paper, a CMOS Class-G supply modulation for polar power amplifiers with high average efficiency and low ripple noise is proposed. In the proposed Class-G supply modulation, the parallel supply modulations which are controlled by switch signals are utilized for low power and high power supplies to increase the average efficiency. A low dropout (LDO) is utilized to suppress the delta-modulated noise and provide a low ripple noise power supply. The proposed supply modulation has high efficiency at large output current as the conventional supply modulation, and it also has high efficiency and low ripple noise at the low output current. To verify the effectiveness of the proposed supply modulation, the proposed supply modulation was designed with 0.13 µm CMOS process. The simulation results show that the proposed supply modulation achieves a maximum efficiency of 85.1%. It achieves an average efficiency of 29.3% and a 7.1% improvement compared with the conventional supply modulations with Class-E power amplifier. The proposed supply modulation also shows an excellent spurious free dynamic range (SFDR) of -73 dBc for output envelope signal.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/transfun.E95.A.487/_p

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@ARTICLE{e95-a_2_487,
author={Qing LIU, Jiangtao SUN, YongJu SUH, Nobuyuki ITOH, Toshihiko YOSHIMASU, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise},
year={2012},
volume={E95-A},
number={2},
pages={487-497},
abstract={In this paper, a CMOS Class-G supply modulation for polar power amplifiers with high average efficiency and low ripple noise is proposed. In the proposed Class-G supply modulation, the parallel supply modulations which are controlled by switch signals are utilized for low power and high power supplies to increase the average efficiency. A low dropout (LDO) is utilized to suppress the delta-modulated noise and provide a low ripple noise power supply. The proposed supply modulation has high efficiency at large output current as the conventional supply modulation, and it also has high efficiency and low ripple noise at the low output current. To verify the effectiveness of the proposed supply modulation, the proposed supply modulation was designed with 0.13 µm CMOS process. The simulation results show that the proposed supply modulation achieves a maximum efficiency of 85.1%. It achieves an average efficiency of 29.3% and a 7.1% improvement compared with the conventional supply modulations with Class-E power amplifier. The proposed supply modulation also shows an excellent spurious free dynamic range (SFDR) of -73 dBc for output envelope signal.},
keywords={},
doi={10.1587/transfun.E95.A.487},
ISSN={1745-1337},
month={February},}

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TY - JOUR
TI - A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 487
EP - 497
AU - Qing LIU
AU - Jiangtao SUN
AU - YongJu SUH
AU - Nobuyuki ITOH
AU - Toshihiko YOSHIMASU
PY - 2012
DO - 10.1587/transfun.E95.A.487
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E95-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2012
AB - In this paper, a CMOS Class-G supply modulation for polar power amplifiers with high average efficiency and low ripple noise is proposed. In the proposed Class-G supply modulation, the parallel supply modulations which are controlled by switch signals are utilized for low power and high power supplies to increase the average efficiency. A low dropout (LDO) is utilized to suppress the delta-modulated noise and provide a low ripple noise power supply. The proposed supply modulation has high efficiency at large output current as the conventional supply modulation, and it also has high efficiency and low ripple noise at the low output current. To verify the effectiveness of the proposed supply modulation, the proposed supply modulation was designed with 0.13 µm CMOS process. The simulation results show that the proposed supply modulation achieves a maximum efficiency of 85.1%. It achieves an average efficiency of 29.3% and a 7.1% improvement compared with the conventional supply modulations with Class-E power amplifier. The proposed supply modulation also shows an excellent spurious free dynamic range (SFDR) of -73 dBc for output envelope signal.
ER -