A Dual-Conduction Class-C VCO for a Low Supply Voltage

Kenichi OKADA; You NOMIYAMA; Rui MURAKAMI; Akira MATSUZAWA

doi:10.1587/transfun.E95.A.506

A Dual-Conduction Class-C VCO for a Low Supply Voltage

Kenichi OKADA, You NOMIYAMA, Rui MURAKAMI, Akira MATSUZAWA

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This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 µm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@1 MHz-offset with a power consumption of 114 µW, and the FoM is -187 dBc/Hz.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E95-A No.2 pp.506-514

Publication Date: 2012/02/01

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Online ISSN: 1745-1337

DOI: 10.1587/transfun.E95.A.506

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)

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Kenichi OKADA, You NOMIYAMA, Rui MURAKAMI, Akira MATSUZAWA, "A Dual-Conduction Class-C VCO for a Low Supply Voltage" in IEICE TRANSACTIONS on Fundamentals, vol. E95-A, no. 2, pp. 506-514, February 2012, doi: 10.1587/transfun.E95.A.506.
Abstract: This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 µm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@1 MHz-offset with a power consumption of 114 µW, and the FoM is -187 dBc/Hz.
URL: https://globals.ieice.org/en_transactions/fundamentals/10.1587/transfun.E95.A.506/_p

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@ARTICLE{e95-a_2_506,
author={Kenichi OKADA, You NOMIYAMA, Rui MURAKAMI, Akira MATSUZAWA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={A Dual-Conduction Class-C VCO for a Low Supply Voltage},
year={2012},
volume={E95-A},
number={2},
pages={506-514},
abstract={This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 µm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@1 MHz-offset with a power consumption of 114 µW, and the FoM is -187 dBc/Hz.},
keywords={},
doi={10.1587/transfun.E95.A.506},
ISSN={1745-1337},
month={February},}

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TY - JOUR
TI - A Dual-Conduction Class-C VCO for a Low Supply Voltage
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 506
EP - 514
AU - Kenichi OKADA
AU - You NOMIYAMA
AU - Rui MURAKAMI
AU - Akira MATSUZAWA
PY - 2012
DO - 10.1587/transfun.E95.A.506
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E95-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2012
AB - This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 µm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@1 MHz-offset with a power consumption of 114 µW, and the FoM is -187 dBc/Hz.
ER -