Generalized Marching Test for Detecting Pattern Sensitive Faults in RAMs

Masahiro HASHIMOTO; Eiji FUJIWARA

Generalized Marching Test for Detecting Pattern Sensitive Faults in RAMs

Masahiro HASHIMOTO, Eiji FUJIWARA

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Since semiconductor memory chip has been growing rapidly in its capacity, memory testing has become a crucial problem in RAMs. This paper proposes a new RAM test algorithm, called generalized marching test (GMT), which detects static and dynamic pattern sensitive faults (PSF) in RAM chips. The memory array with N cells is partitioned into B sets in which every two cells has a cell-distance of at least d. The proposed GMT performs the ordinary marching test in each set and finally detects PSF having cell-distance d. By changing the number of partitions B, the GMT includes the ordinary marching test for B1 and the walking test for BN. This paper demonstrates the practical GMT with B2, capable of detecting PSF, as well as other faults, such as cell stuck-at faults, coupling faults, and decoder faults with a short testing time.

Publication: IEICE TRANSACTIONS on Information Vol.E76-D No.7 pp.809-816

Publication Date: 1993/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on VLSI Testing and Testable Design)

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Masahiro HASHIMOTO, Eiji FUJIWARA, "Generalized Marching Test for Detecting Pattern Sensitive Faults in RAMs" in IEICE TRANSACTIONS on Information, vol. E76-D, no. 7, pp. 809-816, July 1993, doi: .
Abstract: Since semiconductor memory chip has been growing rapidly in its capacity, memory testing has become a crucial problem in RAMs. This paper proposes a new RAM test algorithm, called generalized marching test (GMT), which detects static and dynamic pattern sensitive faults (PSF) in RAM chips. The memory array with N cells is partitioned into B sets in which every two cells has a cell-distance of at least d. The proposed GMT performs the ordinary marching test in each set and finally detects PSF having cell-distance d. By changing the number of partitions B, the GMT includes the ordinary marching test for B1 and the walking test for BN. This paper demonstrates the practical GMT with B2, capable of detecting PSF, as well as other faults, such as cell stuck-at faults, coupling faults, and decoder faults with a short testing time.
URL: https://globals.ieice.org/en_transactions/information/10.1587/e76-d_7_809/_p

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@ARTICLE{e76-d_7_809,
author={Masahiro HASHIMOTO, Eiji FUJIWARA, },
journal={IEICE TRANSACTIONS on Information},
title={Generalized Marching Test for Detecting Pattern Sensitive Faults in RAMs},
year={1993},
volume={E76-D},
number={7},
pages={809-816},
abstract={Since semiconductor memory chip has been growing rapidly in its capacity, memory testing has become a crucial problem in RAMs. This paper proposes a new RAM test algorithm, called generalized marching test (GMT), which detects static and dynamic pattern sensitive faults (PSF) in RAM chips. The memory array with N cells is partitioned into B sets in which every two cells has a cell-distance of at least d. The proposed GMT performs the ordinary marching test in each set and finally detects PSF having cell-distance d. By changing the number of partitions B, the GMT includes the ordinary marching test for B1 and the walking test for BN. This paper demonstrates the practical GMT with B2, capable of detecting PSF, as well as other faults, such as cell stuck-at faults, coupling faults, and decoder faults with a short testing time.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Generalized Marching Test for Detecting Pattern Sensitive Faults in RAMs
T2 - IEICE TRANSACTIONS on Information
SP - 809
EP - 816
AU - Masahiro HASHIMOTO
AU - Eiji FUJIWARA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Information
SN -
VL - E76-D
IS - 7
JA - IEICE TRANSACTIONS on Information
Y1 - July 1993
AB - Since semiconductor memory chip has been growing rapidly in its capacity, memory testing has become a crucial problem in RAMs. This paper proposes a new RAM test algorithm, called generalized marching test (GMT), which detects static and dynamic pattern sensitive faults (PSF) in RAM chips. The memory array with N cells is partitioned into B sets in which every two cells has a cell-distance of at least d. The proposed GMT performs the ordinary marching test in each set and finally detects PSF having cell-distance d. By changing the number of partitions B, the GMT includes the ordinary marching test for B1 and the walking test for BN. This paper demonstrates the practical GMT with B2, capable of detecting PSF, as well as other faults, such as cell stuck-at faults, coupling faults, and decoder faults with a short testing time.
ER -