Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers

Shigeyuki AKIBA; Yoshio ITAYA; Kazuo SAKAI; Takaya YAMAMOTO; Yasuharu SUEMATSU

Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers

Shigeyuki AKIBA, Yoshio ITAYA, Kazuo SAKAI, Takaya YAMAMOTO, Yasuharu SUEMATSU

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Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kA・cm^-2. µm^-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.

Publication: IEICE TRANSACTIONS on transactions Vol.E61-E No.3 pp.124-127

Publication Date: 1978/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Integrated Optics and Optical Fiber Communications)

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Shigeyuki AKIBA
Yoshio ITAYA
Kazuo SAKAI
Takaya YAMAMOTO
Yasuharu SUEMATSU

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Shigeyuki AKIBA, Yoshio ITAYA, Kazuo SAKAI, Takaya YAMAMOTO, Yasuharu SUEMATSU, "Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers" in IEICE TRANSACTIONS on transactions, vol. E61-E, no. 3, pp. 124-127, March 1978, doi: .
Abstract: Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kA・cm^-2. µm^-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e61-e_3_124/_p

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@ARTICLE{e61-e_3_124,
author={Shigeyuki AKIBA, Yoshio ITAYA, Kazuo SAKAI, Takaya YAMAMOTO, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers},
year={1978},
volume={E61-E},
number={3},
pages={124-127},
abstract={Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kA・cm^-2. µm^-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 124
EP - 127
AU - Shigeyuki AKIBA
AU - Yoshio ITAYA
AU - Kazuo SAKAI
AU - Takaya YAMAMOTO
AU - Yasuharu SUEMATSU
PY - 1978
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E61-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1978
AB - Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kA・cm^-2. µm^-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.
ER -