A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors

Yasuhiro TANAKA; Tatsuya SASAKI; Toshihisa HONMA; Ikuo KAJI

A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors

Yasuhiro TANAKA, Tatsuya SASAKI, Toshihisa HONMA, Ikuo KAJI

Full Text Views

0

Share
Cite this

Summary :

A new boundary integral formulation is presented in order to solve a general Laplace-Poisson's equation, which is one of the basic equations of semiconductor devices. As this formulation is based on Green's second identity or Gauss' divergence theorem, no conventional volume integral is needed, regardless of arbitrary distributions of space charge. The potentials and electric field intensities at interface nodes put between a Laplace and a Poisson domain are analytically calculated, because interface nodes are treated as same as internal points. It is effective and powerful to device analysis of such a junction-gate field effect transistor with interfaces movable according to operation bias conditions. On the basis of simple numerical experiments, the present method is applied to a simplified device models. It is shown that device analysis can be easily obtained for a more small discretized model. In consequence, numerical results also demonstrate the effectiveness of this approach.

Publication: IEICE TRANSACTIONS on transactions Vol.E69-E No.2 pp.148-156

Publication Date: 1986/02/25

Publicized

Online ISSN

DOI

Type of Manuscript: PAPER

Category: Semiconductors

Authors

Yasuhiro TANAKA
Tatsuya SASAKI
Toshihisa HONMA
Ikuo KAJI

Keyword

Cite this

Copy

Yasuhiro TANAKA, Tatsuya SASAKI, Toshihisa HONMA, Ikuo KAJI, "A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 2, pp. 148-156, February 1986, doi: .
Abstract: A new boundary integral formulation is presented in order to solve a general Laplace-Poisson's equation, which is one of the basic equations of semiconductor devices. As this formulation is based on Green's second identity or Gauss' divergence theorem, no conventional volume integral is needed, regardless of arbitrary distributions of space charge. The potentials and electric field intensities at interface nodes put between a Laplace and a Poisson domain are analytically calculated, because interface nodes are treated as same as internal points. It is effective and powerful to device analysis of such a junction-gate field effect transistor with interfaces movable according to operation bias conditions. On the basis of simple numerical experiments, the present method is applied to a simplified device models. It is shown that device analysis can be easily obtained for a more small discretized model. In consequence, numerical results also demonstrate the effectiveness of this approach.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e69-e_2_148/_p

Copy

@ARTICLE{e69-e_2_148,
author={Yasuhiro TANAKA, Tatsuya SASAKI, Toshihisa HONMA, Ikuo KAJI, },
journal={IEICE TRANSACTIONS on transactions},
title={A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors},
year={1986},
volume={E69-E},
number={2},
pages={148-156},
abstract={A new boundary integral formulation is presented in order to solve a general Laplace-Poisson's equation, which is one of the basic equations of semiconductor devices. As this formulation is based on Green's second identity or Gauss' divergence theorem, no conventional volume integral is needed, regardless of arbitrary distributions of space charge. The potentials and electric field intensities at interface nodes put between a Laplace and a Poisson domain are analytically calculated, because interface nodes are treated as same as internal points. It is effective and powerful to device analysis of such a junction-gate field effect transistor with interfaces movable according to operation bias conditions. On the basis of simple numerical experiments, the present method is applied to a simplified device models. It is shown that device analysis can be easily obtained for a more small discretized model. In consequence, numerical results also demonstrate the effectiveness of this approach.},
keywords={},
doi={},
ISSN={},
month={February},}

Copy

TY - JOUR
TI - A Boundary Element Approach to Field Analysis of Junction-Gate Field Effect Transistors
T2 - IEICE TRANSACTIONS on transactions
SP - 148
EP - 156
AU - Yasuhiro TANAKA
AU - Tatsuya SASAKI
AU - Toshihisa HONMA
AU - Ikuo KAJI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1986
AB - A new boundary integral formulation is presented in order to solve a general Laplace-Poisson's equation, which is one of the basic equations of semiconductor devices. As this formulation is based on Green's second identity or Gauss' divergence theorem, no conventional volume integral is needed, regardless of arbitrary distributions of space charge. The potentials and electric field intensities at interface nodes put between a Laplace and a Poisson domain are analytically calculated, because interface nodes are treated as same as internal points. It is effective and powerful to device analysis of such a junction-gate field effect transistor with interfaces movable according to operation bias conditions. On the basis of simple numerical experiments, the present method is applied to a simplified device models. It is shown that device analysis can be easily obtained for a more small discretized model. In consequence, numerical results also demonstrate the effectiveness of this approach.
ER -