Low Threshold GalnAsP/InP Surface Emitting Laser

Seiji UCHIYAMA; Kenichi IGA

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Seiji UCHIYAMA, Kenichi IGA, "Low Threshold GalnAsP/InP Surface Emitting Laser" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 5, pp. 587-588, May 1986, doi: .
Abstract: In order to reduce the threshold current of a GalnAsP/InP surface emitting junction laser, a SiO₂/metal mirror which provied high reflectivity has been introduced. The minimum threshold was reduced down to 18 mA at 77 K which is about a half of the previous case (35 mA). The operating temperature was raised up to 10.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e69-e_5_587/_p

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@ARTICLE{e69-e_5_587,
author={Seiji UCHIYAMA, Kenichi IGA, },
journal={IEICE TRANSACTIONS on transactions},
title={Low Threshold GalnAsP/InP Surface Emitting Laser},
year={1986},
volume={E69-E},
number={5},
pages={587-588},
abstract={In order to reduce the threshold current of a GalnAsP/InP surface emitting junction laser, a SiO₂/metal mirror which provied high reflectivity has been introduced. The minimum threshold was reduced down to 18 mA at 77 K which is about a half of the previous case (35 mA). The operating temperature was raised up to 10.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Low Threshold GalnAsP/InP Surface Emitting Laser
T2 - IEICE TRANSACTIONS on transactions
SP - 587
EP - 588
AU - Seiji UCHIYAMA
AU - Kenichi IGA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1986
AB - In order to reduce the threshold current of a GalnAsP/InP surface emitting junction laser, a SiO₂/metal mirror which provied high reflectivity has been introduced. The minimum threshold was reduced down to 18 mA at 77 K which is about a half of the previous case (35 mA). The operating temperature was raised up to 10.
ER -