GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques

Chiaki WATANABE; Satoru KINOSHITA; Kazuhito FURUYA; Yasuyuki MIYAMOTO

GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques

Chiaki WATANABE, Satoru KINOSHITA, Kazuhito FURUYA, Yasuyuki MIYAMOTO

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GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm²/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.

Publication: IEICE TRANSACTIONS on transactions Vol.E69-E No.7 pp.779-781

Publication Date: 1986/07/25

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Type of Manuscript: LETTER

Category: Semiconductors

Authors

Chiaki WATANABE
Satoru KINOSHITA
Kazuhito FURUYA
Yasuyuki MIYAMOTO

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Chiaki WATANABE, Satoru KINOSHITA, Kazuhito FURUYA, Yasuyuki MIYAMOTO, "GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 7, pp. 779-781, July 1986, doi: .
Abstract: GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm²/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e69-e_7_779/_p

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@ARTICLE{e69-e_7_779,
author={Chiaki WATANABE, Satoru KINOSHITA, Kazuhito FURUYA, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on transactions},
title={GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques},
year={1986},
volume={E69-E},
number={7},
pages={779-781},
abstract={GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm²/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - GaInAs/InP MOSFETs by Organometallic Vapor Phase Epitaxy and Water Oxidation Techniques
T2 - IEICE TRANSACTIONS on transactions
SP - 779
EP - 781
AU - Chiaki WATANABE
AU - Satoru KINOSHITA
AU - Kazuhito FURUYA
AU - Yasuyuki MIYAMOTO
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 7
JA - IEICE TRANSACTIONS on transactions
Y1 - July 1986
AB - GaInAs/InP MOSFETs were fabricated by organometallic vapor phase epitaxy (OMVPE) for the first time to obtain an effective channel mobility of 900 cm²/Vs comparable to the best data by other growth techniques. For the MOS structure, a native oxide layer was formed by low-temperature (220) oxidation technique using water. Due to potentially high uniformity, OMVPE MOSFET technique could be very attractive in the optoelectronic integrated circuits(OEIC) for optical communication.
ER -