The error in the charge sheet model proposed by Brews for the approximation of the drain current of a long channel MOSFET has been analyzed. Percent error curves are presented as a function of surface potential with doping concentration and oxide thickness as parameters.
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Kiyoko NAGAI, Yutaka HAYASHI, "Error Estimation of a Charge Sheet Model in Calculating the Drain Current of a Thin Gate Oxide MOSFET" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 11, pp. 1104-1105, November 1987, doi: .
Abstract: The error in the charge sheet model proposed by Brews for the approximation of the drain current of a long channel MOSFET has been analyzed. Percent error curves are presented as a function of surface potential with doping concentration and oxide thickness as parameters.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e70-e_11_1104/_p
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@ARTICLE{e70-e_11_1104,
author={Kiyoko NAGAI, Yutaka HAYASHI, },
journal={IEICE TRANSACTIONS on transactions},
title={Error Estimation of a Charge Sheet Model in Calculating the Drain Current of a Thin Gate Oxide MOSFET},
year={1987},
volume={E70-E},
number={11},
pages={1104-1105},
abstract={The error in the charge sheet model proposed by Brews for the approximation of the drain current of a long channel MOSFET has been analyzed. Percent error curves are presented as a function of surface potential with doping concentration and oxide thickness as parameters.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Error Estimation of a Charge Sheet Model in Calculating the Drain Current of a Thin Gate Oxide MOSFET
T2 - IEICE TRANSACTIONS on transactions
SP - 1104
EP - 1105
AU - Kiyoko NAGAI
AU - Yutaka HAYASHI
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1987
AB - The error in the charge sheet model proposed by Brews for the approximation of the drain current of a long channel MOSFET has been analyzed. Percent error curves are presented as a function of surface potential with doping concentration and oxide thickness as parameters.
ER -