674 nm Wavelength Planar-Buried-Heterostructure GaInAsP/AlGaAs Visible Laser Diodes Grown on GaAs by LPE

Akinori HARADA; Katsumi KISHINO

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Akinori HARADA, Katsumi KISHINO, "674 nm Wavelength Planar-Buried-Heterostructure GaInAsP/AlGaAs Visible Laser Diodes Grown on GaAs by LPE" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 1, pp. 17-19, January 1987, doi: .
Abstract: Planar buried heterostructure GaInAsP/AlGaAs visible lasers emitting at 674 nm in wavelength fabricated for the first time and operated under room temperature pulse condition. The low threshold current of 80 mA and the output power of 5 mW/facet were obtained.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e70-e_1_17/_p

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@ARTICLE{e70-e_1_17,
author={Akinori HARADA, Katsumi KISHINO, },
journal={IEICE TRANSACTIONS on transactions},
title={674 nm Wavelength Planar-Buried-Heterostructure GaInAsP/AlGaAs Visible Laser Diodes Grown on GaAs by LPE},
year={1987},
volume={E70-E},
number={1},
pages={17-19},
abstract={Planar buried heterostructure GaInAsP/AlGaAs visible lasers emitting at 674 nm in wavelength fabricated for the first time and operated under room temperature pulse condition. The low threshold current of 80 mA and the output power of 5 mW/facet were obtained.},
keywords={},
doi={},
ISSN={},
month={January},}

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TY - JOUR
TI - 674 nm Wavelength Planar-Buried-Heterostructure GaInAsP/AlGaAs Visible Laser Diodes Grown on GaAs by LPE
T2 - IEICE TRANSACTIONS on transactions
SP - 17
EP - 19
AU - Akinori HARADA
AU - Katsumi KISHINO
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1987
AB - Planar buried heterostructure GaInAsP/AlGaAs visible lasers emitting at 674 nm in wavelength fabricated for the first time and operated under room temperature pulse condition. The low threshold current of 80 mA and the output power of 5 mW/facet were obtained.
ER -