Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE

Yasuyuki MIYAMOTO; Chiaki WATANABE; Masashi NAGASHIMA; Kazuhito FURUYA; Yasuharu SUEMATSU

Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE

Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU

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Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm²) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.

Publication: IEICE TRANSACTIONS on transactions Vol.E70-E No.2 pp.121-129

Publication Date: 1987/02/25

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Type of Manuscript: PAPER

Category: Optical and Quantum Electronics

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Yasuyuki MIYAMOTO
Chiaki WATANABE
Masashi NAGASHIMA
Kazuhito FURUYA
Yasuharu SUEMATSU

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Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, "Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 2, pp. 121-129, February 1987, doi: .
Abstract: Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm²) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e70-e_2_121/_p

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@ARTICLE{e70-e_2_121,
author={Yasuyuki MIYAMOTO, Chiaki WATANABE, Masashi NAGASHIMA, Kazuhito FURUYA, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE},
year={1987},
volume={E70-E},
number={2},
pages={121-129},
abstract={Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm²) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Fabrication of GaInAsP/InP Heterostructure for 1.5 µm Lasers by OMVPE
T2 - IEICE TRANSACTIONS on transactions
SP - 121
EP - 129
AU - Yasuyuki MIYAMOTO
AU - Chiaki WATANABE
AU - Masashi NAGASHIMA
AU - Kazuhito FURUYA
AU - Yasuharu SUEMATSU
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1987
AB - Fabrication of GaInAsP/InP heterostructure lasers for 1.5 µm wavelength region by organometallic vapor phase epitaxy are discussed. Results of growth conditions, which were experimentally found important to obtain the low threshold current density (1 kA/cm²) comparable with LPE at 1.5 µm lasing oscillation are reported, such as gas switching at hetero-interfaces, maintenance of constant temperature over the growth of all layers, selection of carrier gas and doping conditions. Furthermore, OMVPE device techniques for buried heterostructure laser operating at CW condition are described. Fabrications and characterization of quantum well structure are also reported.
ER -