Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes

H. GHAFOORI-SHIRAZ

Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes

H. GHAFOORI-SHIRAZ

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The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.

Publication: IEICE TRANSACTIONS on transactions Vol.E70-E No.2 pp.130-134

Publication Date: 1987/02/25

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Type of Manuscript: PAPER

Category: Optical and Quantum Electronics

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H. GHAFOORI-SHIRAZ

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H. GHAFOORI-SHIRAZ, "Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 2, pp. 130-134, February 1987, doi: .
Abstract: The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e70-e_2_130/_p

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@ARTICLE{e70-e_2_130,
author={H. GHAFOORI-SHIRAZ, },
journal={IEICE TRANSACTIONS on transactions},
title={Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes},
year={1987},
volume={E70-E},
number={2},
pages={130-134},
abstract={The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Single Transverse Mode Condition in Long Wavelength SCH Semiconductor Laser Diodes
T2 - IEICE TRANSACTIONS on transactions
SP - 130
EP - 134
AU - H. GHAFOORI-SHIRAZ
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1987
AB - The single fundamental transverse mode condition, both in three-layer DH, and asymmetrical five-layer separate confinement heterostructure (SCH) laser diodes operating at 1.55 µm wavelength, has been investigated based on the effective refractive index. The simple derived formula can be applied to obtain the effective refractive index of the dominant mode in DFB laser diodes to determine the corrugation period corresponding to the designed wavelength.
ER -