High Performance and Versatile Bi-CMOS Electronic Volume IC

Yasuhiro SUGIMOTO; Hiromi MAFUNE; Hiroshi SHIOBARA

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Yasuhiro SUGIMOTO, Hiromi MAFUNE, Hiroshi SHIOBARA, "High Performance and Versatile Bi-CMOS Electronic Volume IC" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 4, pp. 289-291, April 1988, doi: .
Abstract: The high performance and versatile electronic volume IC has been realized by the 15 V high voltage Bi-CMOS process. Mixed use of bipolar and MOS devices has introduced new functions such as buffer amplifiers, a low level oscillator, a temperature compensated D/A converter and a reference voltage generator.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e71-e_4_289/_p

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@ARTICLE{e71-e_4_289,
author={Yasuhiro SUGIMOTO, Hiromi MAFUNE, Hiroshi SHIOBARA, },
journal={IEICE TRANSACTIONS on transactions},
title={High Performance and Versatile Bi-CMOS Electronic Volume IC},
year={1988},
volume={E71-E},
number={4},
pages={289-291},
abstract={The high performance and versatile electronic volume IC has been realized by the 15 V high voltage Bi-CMOS process. Mixed use of bipolar and MOS devices has introduced new functions such as buffer amplifiers, a low level oscillator, a temperature compensated D/A converter and a reference voltage generator.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - High Performance and Versatile Bi-CMOS Electronic Volume IC
T2 - IEICE TRANSACTIONS on transactions
SP - 289
EP - 291
AU - Yasuhiro SUGIMOTO
AU - Hiromi MAFUNE
AU - Hiroshi SHIOBARA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1988
AB - The high performance and versatile electronic volume IC has been realized by the 15 V high voltage Bi-CMOS process. Mixed use of bipolar and MOS devices has introduced new functions such as buffer amplifiers, a low level oscillator, a temperature compensated D/A converter and a reference voltage generator.
ER -