Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--

Takao NAGATOMO; Keiichi KOHAMA; Katsuhiko MIKAMI; Osamu OMOTO

Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--

Takao NAGATOMO, Keiichi KOHAMA, Katsuhiko MIKAMI, Osamu OMOTO

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Gallium nitride single crystals were grown on (0001) oriented sapphire substrates by metalorganic vapor-phase epitaxy. The films on the initially nitrided sapphire surface showed an uneven surface with prominent hexagonal pyramids, while the films on the non-nitrided sapphire surface exhibited a relatively smooth surface although some fine pits were observed. All the films exhibited n-type conduction with carrier concentrations of 10¹⁷-10¹⁸ cm^-3 and electron mobilities of 30-143 cm²/V sec.

Publication: IEICE TRANSACTIONS on transactions Vol.E71-E No.4 pp.292-294

Publication Date: 1988/04/25

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Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)

Category: Semiconductor Devices and Integrated Circuits

Authors

Takao NAGATOMO
Keiichi KOHAMA
Katsuhiko MIKAMI
Osamu OMOTO

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Takao NAGATOMO, Keiichi KOHAMA, Katsuhiko MIKAMI, Osamu OMOTO, "Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 4, pp. 292-294, April 1988, doi: .
Abstract: Gallium nitride single crystals were grown on (0001) oriented sapphire substrates by metalorganic vapor-phase epitaxy. The films on the initially nitrided sapphire surface showed an uneven surface with prominent hexagonal pyramids, while the films on the non-nitrided sapphire surface exhibited a relatively smooth surface although some fine pits were observed. All the films exhibited n-type conduction with carrier concentrations of 10¹⁷-10¹⁸ cm^-3 and electron mobilities of 30-143 cm²/V sec.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e71-e_4_292/_p

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@ARTICLE{e71-e_4_292,
author={Takao NAGATOMO, Keiichi KOHAMA, Katsuhiko MIKAMI, Osamu OMOTO, },
journal={IEICE TRANSACTIONS on transactions},
title={Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--},
year={1988},
volume={E71-E},
number={4},
pages={292-294},
abstract={Gallium nitride single crystals were grown on (0001) oriented sapphire substrates by metalorganic vapor-phase epitaxy. The films on the initially nitrided sapphire surface showed an uneven surface with prominent hexagonal pyramids, while the films on the non-nitrided sapphire surface exhibited a relatively smooth surface although some fine pits were observed. All the films exhibited n-type conduction with carrier concentrations of 10¹⁷-10¹⁸ cm^-3 and electron mobilities of 30-143 cm²/V sec.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--
T2 - IEICE TRANSACTIONS on transactions
SP - 292
EP - 294
AU - Takao NAGATOMO
AU - Keiichi KOHAMA
AU - Katsuhiko MIKAMI
AU - Osamu OMOTO
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1988
AB - Gallium nitride single crystals were grown on (0001) oriented sapphire substrates by metalorganic vapor-phase epitaxy. The films on the initially nitrided sapphire surface showed an uneven surface with prominent hexagonal pyramids, while the films on the non-nitrided sapphire surface exhibited a relatively smooth surface although some fine pits were observed. All the films exhibited n-type conduction with carrier concentrations of 10¹⁷-10¹⁸ cm^-3 and electron mobilities of 30-143 cm²/V sec.
ER -