Characteristics of a-Si: H Thin Films Fabricated at Various Substrate Bias Outside of Microwave Discharge Plasma

Kazunari ISHIMARU; Tetsuya TATSUMI; Isamu KATO

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Kazunari ISHIMARU, Tetsuya TATSUMI, Isamu KATO, "Characteristics of a-Si: H Thin Films Fabricated at Various Substrate Bias Outside of Microwave Discharge Plasma" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 4, pp. 299-300, April 1988, doi: .
Abstract: We fabricated a-Si: H thin films outside the microwave discharge plasma and we varied the substrate bias to investigate the effect of ion bombardments of the film surface. Dark conductivity of the film decreases with increasing negative bias of the substrate with no dependence on the substrate temperature.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e71-e_4_299/_p

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@ARTICLE{e71-e_4_299,
author={Kazunari ISHIMARU, Tetsuya TATSUMI, Isamu KATO, },
journal={IEICE TRANSACTIONS on transactions},
title={Characteristics of a-Si: H Thin Films Fabricated at Various Substrate Bias Outside of Microwave Discharge Plasma},
year={1988},
volume={E71-E},
number={4},
pages={299-300},
abstract={We fabricated a-Si: H thin films outside the microwave discharge plasma and we varied the substrate bias to investigate the effect of ion bombardments of the film surface. Dark conductivity of the film decreases with increasing negative bias of the substrate with no dependence on the substrate temperature.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Characteristics of a-Si: H Thin Films Fabricated at Various Substrate Bias Outside of Microwave Discharge Plasma
T2 - IEICE TRANSACTIONS on transactions
SP - 299
EP - 300
AU - Kazunari ISHIMARU
AU - Tetsuya TATSUMI
AU - Isamu KATO
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1988
AB - We fabricated a-Si: H thin films outside the microwave discharge plasma and we varied the substrate bias to investigate the effect of ion bombardments of the film surface. Dark conductivity of the film decreases with increasing negative bias of the substrate with no dependence on the substrate temperature.
ER -