Dual Gate GaAs MESFETs with Low Distortion Gain Control

Seiichi WATANABE; Shinichi TANAKA; Junichiro KOBAYASHI; Hajime OOKE; Hidemi TAKAKUWA; Osamu YONEYAMA

Copy

Seiichi WATANABE, Shinichi TANAKA, Junichiro KOBAYASHI, Hajime OOKE, Hidemi TAKAKUWA, Osamu YONEYAMA, "Dual Gate GaAs MESFETs with Low Distortion Gain Control" in IEICE TRANSACTIONS on transactions, vol. E72-E, no. 4, pp. 310-312, April 1989, doi: .
Abstract: Cross-modulation distortion of dual gate GaAs MESFETs in the gain controlled operation mode has been studied analytically and experimentally, yielding a conclusion that setting the ratio of the structural parameters (mβ₂/β₁) and the pinch-off voltage large is effective for reducing the distortion.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e72-e_4_310/_p

Copy

@ARTICLE{e72-e_4_310,
author={Seiichi WATANABE, Shinichi TANAKA, Junichiro KOBAYASHI, Hajime OOKE, Hidemi TAKAKUWA, Osamu YONEYAMA, },
journal={IEICE TRANSACTIONS on transactions},
title={Dual Gate GaAs MESFETs with Low Distortion Gain Control},
year={1989},
volume={E72-E},
number={4},
pages={310-312},
abstract={Cross-modulation distortion of dual gate GaAs MESFETs in the gain controlled operation mode has been studied analytically and experimentally, yielding a conclusion that setting the ratio of the structural parameters (mβ₂/β₁) and the pinch-off voltage large is effective for reducing the distortion.},
keywords={},
doi={},
ISSN={},
month={April},}

Copy

TY - JOUR
TI - Dual Gate GaAs MESFETs with Low Distortion Gain Control
T2 - IEICE TRANSACTIONS on transactions
SP - 310
EP - 312
AU - Seiichi WATANABE
AU - Shinichi TANAKA
AU - Junichiro KOBAYASHI
AU - Hajime OOKE
AU - Hidemi TAKAKUWA
AU - Osamu YONEYAMA
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1989
AB - Cross-modulation distortion of dual gate GaAs MESFETs in the gain controlled operation mode has been studied analytically and experimentally, yielding a conclusion that setting the ratio of the structural parameters (mβ₂/β₁) and the pinch-off voltage large is effective for reducing the distortion.
ER -