Damage Caused by Stored Charge during ECR Plasma Etching

Seiji SAMUKAWA

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Seiji SAMUKAWA, "Damage Caused by Stored Charge during ECR Plasma Etching" in IEICE TRANSACTIONS on transactions, vol. E72-E, no. 4, pp. 315-317, April 1989, doi: .
Abstract: Leakage current shift of CMOS inverter circuits due to stored charge during Electron Cyclotron Resonance (ECR) plasma exposure was smaller than Reactive Ion Etching (RIE). But in case applied RF power is turned off at the same time of microwave power off, gate insulator breaks down. Also, electrostatic chuck cooling (ESC cooling) for cooling wafer makes stored charge larger.
URL: https://globals.ieice.org/en_transactions/transactions/10.1587/e72-e_4_315/_p

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@ARTICLE{e72-e_4_315,
author={Seiji SAMUKAWA, },
journal={IEICE TRANSACTIONS on transactions},
title={Damage Caused by Stored Charge during ECR Plasma Etching},
year={1989},
volume={E72-E},
number={4},
pages={315-317},
abstract={Leakage current shift of CMOS inverter circuits due to stored charge during Electron Cyclotron Resonance (ECR) plasma exposure was smaller than Reactive Ion Etching (RIE). But in case applied RF power is turned off at the same time of microwave power off, gate insulator breaks down. Also, electrostatic chuck cooling (ESC cooling) for cooling wafer makes stored charge larger.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Damage Caused by Stored Charge during ECR Plasma Etching
T2 - IEICE TRANSACTIONS on transactions
SP - 315
EP - 317
AU - Seiji SAMUKAWA
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1989
AB - Leakage current shift of CMOS inverter circuits due to stored charge during Electron Cyclotron Resonance (ECR) plasma exposure was smaller than Reactive Ion Etching (RIE). But in case applied RF power is turned off at the same time of microwave power off, gate insulator breaks down. Also, electrostatic chuck cooling (ESC cooling) for cooling wafer makes stored charge larger.
ER -