A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth = 0.33 V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO = +0.33 V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.