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This paper proposes a 10 µm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500, for 1 hr at H2O/O2) and a rapid thermal oxidation (RTO) process (1050, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 µm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050 (1 hr at H2O/O2). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.
Jong-Hyun LEE Jinung AN Chang Wook AHN
Operating swarm robots has the virtues of improved performance, fault tolerance, distributed sensing, and so on. The problem is, high overall system costs are the main barrier in managing a system of foraging swarm robots. Moreover, its control algorithm should be scalable and reliable as the foraging (search) spaces become wider. This paper analyzes a nature-inspired cooperative method to reduce the operating costs of the foraging swarm robots through simulation experiments. The aim of this research is to improve efficiency of mechanisms for reducing the cost by developing a new algorithm for the synergistic cooperation of the group. In this paper, we set the evaluation index of energy efficiency considering that the mission success rate as well as energy saving is important. The value is calculated as the number of successful operations against the total consumption of energy in order to also guarantee optimized for the work processing power than the one simple goal of energy savings. The method employs a behavioral model of a honey bee swarm to improve the energy efficiency in collecting crops or minerals. Experiments demonstrate the effectiveness of the approach. The experiment is set a number of strategies to combine the techniques to the proposed and conventional methods. Considering variables such as the area of search space and the size of a swarm, the efficiency comparison test is performed. As the result, the proposed method showed the enhanced energy efficiency of the average 76.9% as compared to the conventional simple model that means reduction of the recharging cost more than 40%.
Hack-Soo OH Chang-Gene WOO Pyung CHOI Geunbae LIM Jang-Kyoo SHIN Jong-Hyun LEE
Delta-sigma modulators (DSMs) are commonly use in high-resolution analog-to-digital converters, and band-pass delta-sigma modulators have recently been used to convert IF signals into digital signals. In particular, a quadrature band-pass delta-sigma modulator can achieve a lower total order, higher signal-to-noise ratio (SNR), and higher bandwidth when compared with conventional band-pass modulators. The current paper proposes a second-order three-bit quadrature band-pass delta-sigma modulator that can achieve a lower power consumption and better performance with a similar die size to a conventional fourth-order quadrature band-pass delta-sigma modulator (QBPDSM). The proposed system is integrated using CMOS 0.35 µm, double-poly, four-metal technology. The system operates at 13 MHz and can digitize a 200 kHz bandwidth signal centered at 4.875 MHz with an SNR of 85 dB. The power consumption is 35 mW at 3.3 V and 38 mW at 5 V, and the die size is 21.9 mm2.