Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application

Jeong-Yong PARK; Jong-Hyun LEE

Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application

Jeong-Yong PARK, Jong-Hyun LEE

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This paper proposes a 10 µm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 µm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050 (1 hr at H₂O/O₂). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.11 pp.2336-2340

Publication Date: 2003/11/01

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Type of Manuscript: LETTER

Category: Semiconductor Materials and Devices

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Jeong-Yong PARK, Jong-Hyun LEE, "Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 11, pp. 2336-2340, November 2003, doi: .
Abstract: This paper proposes a 10 µm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 µm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050 (1 hr at H₂O/O₂). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_11_2336/_p

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@ARTICLE{e86-c_11_2336,
author={Jeong-Yong PARK, Jong-Hyun LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application},
year={2003},
volume={E86-C},
number={11},
pages={2336-2340},
abstract={This paper proposes a 10 µm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 µm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050 (1 hr at H₂O/O₂). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 2336
EP - 2340
AU - Jeong-Yong PARK
AU - Jong-Hyun LEE
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2003
AB - This paper proposes a 10 µm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 µm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050 (1 hr at H₂O/O₂). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.
ER -