We studied a silicon (Si) waveguide using ferro-electric liquid crystal (FLC) cladding for various applications in optical networks. The FLCs in the cladding layer change their effective refractive index corresponding to the applied voltage polarity, and give a phase shift to the traveling lightwave in the waveguides. The phase change coefficients of three-layer slab waveguides with FLC/Si/SiO2 structure were calculated. We observed an amplitude change in the output light of an experimental modulator consisting of a Mach-Zehnder interferometer with FLC-cladding Si-rib waveguides on a silicon-on-insulator wafer, and evaluated the phase shift at a wavelength of 1550 nm. We propose optical switching devices using Si-rib waveguide Mach-Zehnder interferometers having FLC cladding. Switching of experimental devices operating at 1550 nm wavelength was demonstrated.

All-optical switching operating at 1.55 µm band in fabricated GaInAsP directional couplers loaded with grating are reported experimentally. These switching operations were realized in spatially separated output ports. The devices are suitable for optical integrated circuits and would operate as all-optical routing switches in practical power level by use of optical Kerr effect and Bragg grating. Using the optical bistability in the device, latching operation for output signal can be realized in spatially separated output ports and the outputs from each port are complementary. Two all-optical gate operations, which are optical inverting operation and optically controlled switching in spatially separated output ports, are also demonstrated, where the signal and control lights have different wavelength.

Horizontal slot waveguides enable light to be strongly confined in thin regions. The strong confinement of light in the slot region offers the advantages of enhancing the interaction of light with matter and providing highly sensitive sensing devices. We theoretically investigated fundamental characteristics of horizontal slot waveguides using Nb2O5. The coupling coefficient between SiO2 slot and air slot waveguides was calculated. Characteristics of bending loss in slot waveguide were also analyzed. The etching conditions in reactive ion etching needed to obtain a sidewall with high verticality were studied. We propose a process for fabricating horizontal slot waveguides using Nb2O5 thin film deposition and selective etching of SiO2. Horizontal slot waveguides were fabricated that had an SiO2 slot of less than 30 nm SiO2. The propagated light passing through the slot waveguides was also obtained.