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[Author] Kunihiro ENDO(2hit)

1-2hit
  • Development of 5 GHz Permanent Magnet Peniotron

    Nobuyuki SATO  Shinji SUZUKI  Kunihiro ENDO  Katsumi SAGAE  Kuniyoshi YOKOO  Toshiyuki KIKUNAGA  

     
    PAPER-Electron Tubes, Vacuum and Beam Technologies

      Vol:
    E83-C No:10
      Page(s):
    1677-1682

    The Paper describes design and experiment of 2nd cyclotron harmonic peniotron at microwave region using a permanent magnet system. The magnet system using a cylindrical magnet magnetized along the cylindrical axis is designed and fabricated. The 2nd cyclotron harmonic peniotron operating at the π mode in a six vane magnetron waveguide resonator and at 5 GHz was constructed by using the magnet system. The peak electronic efficiency higher than 30% was achieved at the π mode in the resonator.

  • Millimeter-Wave High-Power MMIC Switch with Multiple FET Resonators

    Masatake HANGAI  Tamotsu NISHINO  Morishige HIEDA  Kunihiro ENDO  Moriyasu MIYAZAKI  

     
    PAPER-Active Devices/Circuits

      Vol:
    E90-C No:9
      Page(s):
    1695-1701

    A millimeter-wave low-loss, high-isolation and high-power terminated MMIC switch is developed, and the design theory is formulated. Our invented switch is designed based on a non-linear relationship between the parallel resistance of an FET and its gate width. Our measurements of the parallel resistance with different gate width have revealed that the resistance is inverse proportion to a square of the gate width. By using this relationship, we have found the fact that the multiple FET resonators with smaller gate width and high inductance elements realize high-Q performance for the same resonant frequency. Since the power handling capability is determined by the total gate width, our switch circuit could reduce its insertion loss, keeping the high-power performance. We additionally describe the design method of this switch circuit. The relationships between the gate widths of the FETs and the electrical performances are described analytically. The required gate widths of the FETs for handling high power signal are represented, and the design equations to obtain lower insertion loss and higher isolation performances keeping high power capability are presented. To verify this methodology, we fabricated a MMIC switch. The MMIC had insertion loss of 2.86 dB, isolation of 37 dB and power handling capability of more than 33 dBm at 32 GHz.

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