This paper presents an even harmonic quadrature mixer (EH-QMIX) with a simple filter configuration and an integrated LTCC module including LNAs, band rejection filters (BRFs), and the proposed EH-QMIX for W-CDMA direct conversion receiver (DCR). Since the DCR has no spurious responses, a BRF instead of a high-Q band pass filter can be applicable for eliminating undesired signals and it can be built in the LTCC substrates easily. As LO frequency is half of RF frequency in the EH-QMIX, diplexer can be composed of simple filters and it can be also integrated in the substrates. As a result, the whole RF circuits of the EH-DCR using a proposed EH-QMIX are integrated in the LTCC module and miniaturization of the receiver is achieved. Moreover, in order to suppress the degradation of the amplitude and the phase imbalances in the quadrature mixer caused by interferences of signals, RF characteristics of the circuits in the mixer such as reflection coefficients, isolations are discussed. A developed LTCC module shows good performances for W-CDMA direct conversion receiver.

We propose an H-plane manifold-type triplexer with closely arranged junctions. Broadband characteristics for each bands are obtained by arranging filters closely near the end of the common waveguide. Three fundamental and sufficient parameters are introduced for numerical optimizations to determine the configuration of the broadband triplexer. The configuration including closely arranged junctions requires an generalized scattering matrix (GS matrix) of an asymmetric cross junction to simulate and design. We expand the mode matching technique (MMT) to be able to analyze this kind of discontinuities by joining two asymmetric steps discontinuities to a symmetric cross junction. This is suitable expressions for numerical calculations. The characteristics of the whole triplexer are obtained by cascading GS matrices of the corresponding discontinuities. The experimental results of the fabricated triplexer were compared with the simulated data, and the results agree well with the simulated one. The characteristics of the fabricated triplexer satisfy the request of the broad band operation and high power-handling capability.

A millimeter-wave low-loss, high-isolation and high-power terminated MMIC switch is developed, and the design theory is formulated. Our invented switch is designed based on a non-linear relationship between the parallel resistance of an FET and its gate width. Our measurements of the parallel resistance with different gate width have revealed that the resistance is inverse proportion to a square of the gate width. By using this relationship, we have found the fact that the multiple FET resonators with smaller gate width and high inductance elements realize high-Q performance for the same resonant frequency. Since the power handling capability is determined by the total gate width, our switch circuit could reduce its insertion loss, keeping the high-power performance. We additionally describe the design method of this switch circuit. The relationships between the gate widths of the FETs and the electrical performances are described analytically. The required gate widths of the FETs for handling high power signal are represented, and the design equations to obtain lower insertion loss and higher isolation performances keeping high power capability are presented. To verify this methodology, we fabricated a MMIC switch. The MMIC had insertion loss of 2.86 dB, isolation of 37 dB and power handling capability of more than 33 dBm at 32 GHz.

This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.

In a multi-layered RF circuit, it is important to avoid unexpected coupling caused by a parallel plate mode excited between different ground layers. Ground via-holes that short-circuit different ground layers are used for suppressing this mode. Quantitative evaluation of relations between suppression effect and ground via-hole disposition is required for optimal design. In this paper, a simple design formula that describes the suppression ratio is derived by mode-matching technique. The results of comparison with an FEM simulation validate our proposed formula. It is shown that the technique is indispensable for designing optimal disposition of via-holes to minimize the area of the ground via-holes for desired performance.