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[Author] Norihiro KAMAE(2hit)

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  • A Forward/Reverse Body Bias Generator with Wide Supply-Range down to Threshold Voltage

    Norihiro KAMAE  Akira TSUCHIYA  Hidetoshi ONODERA  

     
    PAPER

      Vol:
    E98-C No:6
      Page(s):
    504-511

    A forward/reverse body bias generator (BBG) which operates under wide supply-range is proposed. Fine-grained body biasing (FGBB) is effective to reduce variability and increase energy efficiency on digital LSIs. Since FGBB requires a number of BBGs to be implemented, simple design is preferred. We propose a BBG with charge pumps for reverse body bias and the BBG operates under wide supply-range from 0.5,V to 1.2,V. Layout of the BBG was designed in a cell-based flow with an AES core and fabricated in a 65~nm CMOS process. Area of the AES core is 0.22 mm$^2$ and area overhead of the BBG is 2.3%. Demonstration of the AES core shows a successful operation with the supply voltage from 0.5,V to 1.2,V which enables the reduction of power dissipation, for example, of 17% at 400,MHz operation.

  • A Body Bias Generator with Low Supply Voltage for Within-Die Variability Compensation

    Norihiro KAMAE  Akira TSUCHIYA  Hidetoshi ONODERA  

     
    PAPER

      Vol:
    E97-A No:3
      Page(s):
    734-740

    A body bias generator (BBG) for fine-grained body biasing (FGBB) is proposed. The FGBB is effective to reduce variability and power consumption in a system-on-chip (SoC). Since FGBB needs a number of BBGs, the BBG is preferred to be implemented in cell-based design procedure. In the cell-based design, it is inefficient to provide an extra supply voltage for BBGs. We invented a BBG with switched capacitor configuration and it enables BBG to operate with wide range of the supply voltage from 0.6V to 1.2V. We fabricated the BBG in a 65nm CMOS process to control 0.1mm2 of core circuit with the area overhead of 1.4% for the BBG.

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