A silicon (Si) wire waveguiding system fabricated on silicon-on-insulator (SOI) substrates is one of the most promising platforms for highly-integrated, ultra-small optical circuits, or microphotonics devices. The cross-section of the waveguide's core is about 300-nm-square, and the minimum bending radius are a few micrometers. Recently, crucial problems involving propagation losses and in coupling with external circuits have been resolved. Functional devices using silicon wire waveguides are now being tested. In this paper, we describe our recent progress and future prospects on the microphotonics devices based on the silicon-wire waveguiding system.

Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO2 masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH4) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.