The design, fabrication, and measurement of photonic-band-gap (PBG) waveguides and resonators in two-dimensional photonic crystal slabs have been investigated. Although photonic crystal slabs have only partial gaps, efficient waveguides and resonators can be realized by appropriate design. As regards PBG waveguides, we show various designs for efficient single-mode waveguides in PhC slabs with SiO2 cladding, we report group dispersion measurements of PBG waveguides in PhC slabs, and describe the successful fabrication of PBG waveguides with adiabatic connectors that enable us to couple the light from single-mode fibers efficiently to PBG waveguides. As regards PBG resonators, we show how to realize very high-Q and small volume resonators in hexagonal PhC slabs, and report the fabrication of resonant tunneling filters that consist of PBG resonators coupled with PBG waveguides. We also describe the successful fabrication of resonant tunneling mode-gap filters with adiabatic mode connectors.

Effect of the post-growth annealing on the morphology of a Ge mesa selectively grown on Si was studied from the viewpoint of near-infrared photodiode applications. By ultrahigh-vacuum chemical vapor deposition, Ge mesas were selectively grown at 600 on Si (001) substrates partially covered with SiO2 masks. The as-grown Ge mesas showed trapezoidal cross-sections having a top (001) surface and {311} sidewall facets, as similar to previous reports. However, after the subsequent post-growth annealing at ~800 in the ultrahigh-vacuum chamber, the mesas were deformed into rounded shapes having a depression at the center and mounds near the edges. Such a deformation cannot be observed for the samples annealed once after cooled and exposed to the air. The residual hydrogen atoms on the Ge surface from the germane (GeH4) decomposition is regarded as a trigger to the observed morphological instability, while the final mesa shape is determined in order to minimize a sum of the surface and/or strain energies.

A silicon (Si) wire waveguiding system fabricated on silicon-on-insulator (SOI) substrates is one of the most promising platforms for highly-integrated, ultra-small optical circuits, or microphotonics devices. The cross-section of the waveguide's core is about 300-nm-square, and the minimum bending radius are a few micrometers. Recently, crucial problems involving propagation losses and in coupling with external circuits have been resolved. Functional devices using silicon wire waveguides are now being tested. In this paper, we describe our recent progress and future prospects on the microphotonics devices based on the silicon-wire waveguiding system.

LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.

Graphene is attracting attention in electrical and optical research fields recently. We measured the optical absorption characteristics and polarization dependence of single-layer graphene (SLG) on sub-micrometer Si waveguide. The results for graphene lengths ranging from 2.5 to 200 $mu$ m reveal that the optical absorption by graphene is 0.09 dB/$mu$ m with the TE mode and 0.05 dB/$mu$ m with the TM mode. The absorption in the TE mode is 1.8 times higher than that in the TM mode. An optical spectrum, theoretical analysis and Raman spectrum indicate that surface-plasmon polaritons in graphene support TM mode light propagation.

Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon (Si) photonics practical technology. Applying silicon photonics to telecommunications further requires low insertion loss and polarization independence. We propose an integration concept for telecommunications based on Si and related materials and demonstrate monolithic integration of passive and dynamic functional components. This article shows the great potential of Si photonics technology for telecommunications.

We demonstrate phase demodulation of 10-Gbps DPSK signals using a silicon micro-ring resonator with a radius of 10 µm and with various coupling gaps for light of ∼1550 nm in wavelength. Influence of the Q factors and transmissions of the resonators on the response speed and power balance of the two output ports is discussed. Furthermore, temperature sensitivity on resonance peak was measured and we discuss its effect on practical demodulation application.