1-4hit |
Kouhei HARADA Seiji NISHIFUJI Shoichi KAI Kazuyoshi HIRAKAWA
The amplitude and phase of the alpha wave in EEG were studied while flicker stimulation was applied or removed. On applying the stimulation, the amplitude was once attenuated, then entrainment was achieved and reverse phase pattern between posterior and anterior regions was stabilized. As the stimulation was removed, the entrainment state ceased rapidly and the spontaneous activity revived.
Katsuyoshi SATO Masayuki FUJISE Satoru SHIMIZU Seiji NISHI
We developed Millimeter-wave high speed spot communication system using radio-over-fiber technology for ITS telecommunication use. This system has wide bandwidth and provides a high-capacity channel between the base station and parked vehicles. The installation conditions (height, elevation angle) of the base station antenna of this system that enabled the largest possible communication area were obtained by simulation. In addition, we measured propagation and transmission characteristics. The width of the error-free service area was 8 m, which enables three vehicles to be served in one service area.
Kiyoshi HAMAGUCHI Yozo SHOJI Hiroyo OGAWA Yasutake HIRACHI Seiji NISHI Eiichiro KAWAKAMI Eiji SUEMATSU Toshiya IWASAKI Akira AKEYAMA Youichi SHIMOMICHI Takao KIZAWA Ichiro KUWANA
The design and performance of a millimeter-wave video transmission system using 60-GHz band for indoor broadcasting-satellite (BS) signals transmission is presented. This system can transmit multiple video signals such as broadcasting signals and user-oriented signals to a television set indoors. To minimize the local oscillator's frequency offset and phase-noise effects, the system uses a remote-heterodyne scheme. Based on the concept, the system is developed to meet required carrier-to-noise-power-ratio (CNR) and 3rd-order intermodulation (IM). The BS transmission was experimentally done by using the transmitter and receiver setup. The results are very promising and show the feasibility of the system.
Masahiro AKIYAMA Seiji NISHI Yasushi KAWAKAMI
High speed GaAs ICs (Integrated Circutis) using FETs (Field Effect Transistors) are reported. As the fabricating techniques, ion implantation processes for both 0.5 µm and 0.2 µm gate FETs using W/Al refractory metal and 0.2 µm recessed gate process with MBE grown epitaxial wafers are shown. These fabrication processes are selected depending on the circuit speed and the integration level. The outline of the circuit design and the examples of ICs, which are developed for 10 Gb/s optical communication systems, are also shown with the obtained characteristics.