A new CMOS sense-amplifier type flip-flop (SAFF) is proposed. By reducing the discharging time and the loading condition, the setup/hold time is improved by 22%, the input data to clock skew by 46% and the clock to output delay by 4.4%.

In memory design, the issue is smaller size and low power. Most power used in the ROM is consumed in line capacitance such as address lines, word lines, bit lines, and decoder. This paper presents ROM design of a novel HG (Half Grouping) compression method so as to reduce the parasitic capacitance of bit lines and the area of the row decoder for power consumption and chip area reduction. ROM design result of 512 point FFT block shows that the proposed method reduces 40.6% area, 42.12% power, and 37.82% transistor number respectively in comparison with the conventional method. The designed ROM with proposed method is implemented in a 0.35 µm CMOS process. It consumes 5.8 mW at 100 MHz with a single 3.3 V power supply.

We present a new multi-stage charge pump that is suitable for low-voltage operation, and in particular for low voltage flash memory. Compare to the Dickson charge pump and previously reported modified Dickson charge pumps, the proposed charge pump offers the improved pumping voltage gains. The proposed charge pump is composed of a pair of pumps and utilizes the internal boosted voltages of one side of the paired pumps as the charge transferring voltages to the other side. The simulated and measured results indicate that the proposed pump is highly efficient in overcoming both the pumping gain decrease and the current driving capability degradation caused by the threshold voltage of the charge-transfer gate.