The dependence of mode partition characteristics of 1.3 µm Fabry-Perot laser diodes on the modulation frequency and the modulation code has been investigated. From measurements with the frequency domain method and a simple analysis, it is confirmed that the modulation frequency dependence of k-value is caused by a competition among longitudinal modes which occurs with a time constant of several nano seconds. The mode partition characteristics in NRZ code is more affected by this mode competition than that in RZ code. Nevertheless, the k-value in NRZ code at modulation frequency fb is about the same as that in RZ code at modulation frequency fb/2. A simple formula which gives the k-value as a function of the modulation frequency is derived.

The relative intensity noise (RIN) spectra of DC driven 1.3 µm distributed feedback laser diodes under the influence of external reflections are measured for various currents and reflection lengths. The effective power reflectivities are 310-4-310-3. The enhanced noise is observed when the relaxation oscillation frequency coincides with the external cavity frequency. It is also observed that the RIN spectra with the near end reflections differ from those with the far end reflections. The degradation of the RIN spectra is analyzed with the rate equations numerically. A new reflection noise model, which includes the carrier density change induced by the reflections, is introduced. The near and far end reflections are characterized well by this model. Furthermore, it is found that the reflection induced noise effect can be described well by the far end reflection noise model even when the reflection length is as short as 1 m.

The effect of the externally reflected light on the mode partition characteristics of 1.3 µm Fabry-Perot laser diodes is studied experimentally and numerically. It is observed that the k-value increases monotonically with the DC bias current and the external reflection coefficient. Based on these experimental results, a numerical model to study the mode partition characteristics of laser diodes in the presence of external reflections is developed. The results calculated using this model agree well with the experimental ones. It is found that the mode partition noise is mainly caused by the interference between the light in the laser diode and the reflected light, and also by the fluctuations of the induced emission and absorption. In the time domain, their contribution to the mode partition noise is almost localized in the time region within 0.1nsec at the time when the optical pulse turns on.

The mode partition noise of 1.3µm distributed feedback laser diodes (DFB LD's), which is induced by the externally reflected light, is studied experimentally and numerically. The mode partition noise is evaluated by the k-value. It is observed that the mode parition noise monotonically increases with the DC bias current when the reflected light affects DFB LD's and the DC bias current is above the threshold current. From the dependence of the k-value on the external power reflection coefficient, it is observed that the k-value dramatically increases when the external power reflection coefficient is above a value which differs from LD to LD. This is closely related to the fact that the tolerance to the externally reflected light depends on the threshold gain difference between the main mode and the dominant side mode.

The transient spectral spread of directly modulated DFB LD's, which appears in the time-resolved chirping measurement, is studied experimentally and numerically. Such a phenomenon has been already reported as a side mode oscillation called "subpeak", but there has been little argument as to the physical origin. We make it clear that the subpeak is a spurious mode due to the influence of the photodetector bandwidth. The minimum photodetector bandwidth which is necessary in the time-resolved chirping measurement is examined. Furthermore the distortion of the long-distance transmitted waveform is also explained by one mode oscillation.