We have studied the oxidation state of Al/Hf and Ta/Hf bi-layered films by AES/XPS analysis. The anion transport process through the upper oxidized layer which is oxygen supply medium for Hf oxidation is examined. It is found that the oxidation reaction of Hf occurring with sufficient anion transport through the upper oxidized layer corresponds to the excellent properties as capacitors.

Anodization behavior of Al/Mo/Al multilayer films is studied by the method of depth profiling with Auger electron spectroscopy. The leaving out of the molybdenum layer by the drastic transport is observed. The results are discussed on the basis of the mobility of molybdenum cations.