A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS_ISE is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities µeff and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness tSi and buried-oxide thickness tbox. It is shown that the volume-inversion related enhancement of µeff for tSi 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit µeff to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.