Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model

Andreas SCHENK; Andreas WETTSTEIN

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model

Andreas SCHENK, Andreas WETTSTEIN

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A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS__ISE is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities µ_eff and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_Si and buried-oxide thickness t_box. It is shown that the volume-inversion related enhancement of µ_eff for t_Si 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit µ_eff to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.

Publication: IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp.385-390

Publication Date: 2003/03/01

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Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))

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Andreas SCHENK, Andreas WETTSTEIN, "Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model" in IEICE TRANSACTIONS on Electronics, vol. E86-C, no. 3, pp. 385-390, March 2003, doi: .
Abstract: A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS__ISE is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities µ_eff and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_Si and buried-oxide thickness t_box. It is shown that the volume-inversion related enhancement of µ_eff for t_Si 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit µ_eff to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.
URL: https://globals.ieice.org/en_transactions/electronics/10.1587/e86-c_3_385/_p

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@ARTICLE{e86-c_3_385,
author={Andreas SCHENK, Andreas WETTSTEIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model},
year={2003},
volume={E86-C},
number={3},
pages={385-390},
abstract={A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS__ISE is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities µ_eff and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_Si and buried-oxide thickness t_box. It is shown that the volume-inversion related enhancement of µ_eff for t_Si 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit µ_eff to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 385
EP - 390
AU - Andreas SCHENK
AU - Andreas WETTSTEIN
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2003
AB - A TCAD implementation of a quantum-mechanical mobility model in the commercial device simulator DESSIS__ISE is presented. The model makes use of an integrated 1D Schrodinger-Poisson solver. Effective mobilities µ_eff and transfer characteristics are calculated for DGSOI MOSFETs with a wide range of silicon film thickness t_Si and buried-oxide thickness t_box. It is shown that the volume-inversion related enhancement of µ_eff for t_Si 10 nm is bound to symmetrical DGSOIs, whereas SIMOX based devices with thick buried oxides limit µ_eff to the bulk value. The still immature technology makes a conclusive comparison with experimental data impossible.
ER -